650nm Red Single Mode Laser Diode RLD65MZT7 Datasheet Application Outline view Optical disk pickup Sensor Etc. Merit Single mode 5.6 metal stem Absolute Maximum Ratings (Tc=25C) Parameter Symbol Ratings Unit Optical output Po 7 mW LD Vr 2 V Reverse voltage PIN PD Vr(PD) 30 V Operating temp. Top -10 to 70 C Storage temp. Tstg -40 to 85 C Characteristics (Tc=25C) Parameter Symbol Conditions MIN. TYP. MAX. Unit Threshold current Ith 20 60 mA Operating current Iop Po=5mW 28 70 mA Operating voltage Vop Po=5mW 2.3 2.6 V Output efficiency 2mW/(I(5mW)-I(3mW)) 0.2 0.7 1.0 W/A Monitor current Im Po=5mW, Vr(PD)=15V 0.1 0.2 0.5 mA // 6.5 8.0 10.0 deg. Beam divergence Po=5mW 20 27 35 deg. // -3 0 +3 deg. Beam tolerance Po=5mW -4 0 +4 deg. Emission point XYZ -100 0 +100 m accuracy Lasing wavelength Po=5mW 645 659 665 nm Astigmatic difference As NA=0.55, Po=3.5mW 5 10 m Caution: and // are defined as full width at half maximum. Operation temperature is regulated by case temperature Tc RLD65MZT7 Datasheet Electrical Characteristics 25 40 50 60 70 7 7 6 3 6 5 5 I-V 4 2 4 3 3 2 2 1 I-L 1 1 0 0 0 0 0.05 0.1 0.15 0.2 0.25 0.3 0 10 20 30 40 50 60 If mA Im mA Optical Characteristics 25 40 50 60 70 1 1 0.9 0.9 0.8 0.8 0.7 0.7 0.6 0.6 0.5 0.5 0.4 0.4 0.3 0.3 0.2 0.2 0.1 0.1 0 0 655 660 665 670 675 -60 -40 -20 0 20 40 60 FFP deg. nm * This data is made from the result of having measured the sample extracted at random. Therefore, it is not what showed the ability of the whole product.