X-On Electronics has gained recognition as a prominent supplier of RQ7E100ATTCR MOSFET across the USA, India, Europe, Australia, and various other global locations. RQ7E100ATTCR MOSFET are a product manufactured by ROHM. We provide cost-effective solutions for MOSFET, ensuring timely deliveries around the world.

RQ7E100ATTCR ROHM

RQ7E100ATTCR electronic component of ROHM
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See Product Specifications
Part No.RQ7E100ATTCR
Manufacturer: ROHM
Category: MOSFET
Description: MOSFET PCH -30V -10A SMALL SIGNAL
Datasheet: RQ7E100ATTCR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.493 ea
Line Total: USD 1.49

Availability - 3426
Ship by Mon. 29 Jul to Wed. 31 Jul
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2959
Ship by Mon. 29 Jul to Wed. 31 Jul
MOQ : 1
Multiples : 1
1 : USD 1.2765
10 : USD 1.0522
100 : USD 0.8487
500 : USD 0.7394
1000 : USD 0.6187
3000 : USD 0.5923
6000 : USD 0.5923
9000 : USD 0.5693

   
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We are delighted to provide the RQ7E100ATTCR from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RQ7E100ATTCR and other electronic components in the MOSFET category and beyond.

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RQ7E100AT Datasheet Pch -30V -10A Small Signal Power MOSFET llOutline V -30V DSS R (Max.) 11.2m DS(on) TSMT8 I 10A D P 1.5W D llInner circuit llFeatures 1) Low on - resistance 2) Small Surface Mount Package (TSMT8) 3) Pb-free lead plating RoHS compliant llPackaging specifications Embossed Packing Tape Reel size (mm) 180 llApplication Tape width (mm) 8 Type Switching Basic ordering unit (pcs) 3000 Taping code TCR Marking AX llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit V Drain - Source voltage -30 V DSS Continuous drain current I 10 A D *1 I Pulsed drain current 40 A DP V Gate - Source voltage 20 V GSS *2 Avalanche current, single pulse I -10 A AS *2 E Avalanche energy, single pulse 72 mJ AS *3 P 1.5 W D Power dissipation *4 P 1.1 W D Junction temperature T 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 2018 ROHM Co., Ltd. All rights reserved. 1/11 20181129 - Rev.001 RQ7E100AT Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *3 R - - 83.3 /W thJA Thermal resistance, junction - ambient *4 R - - 113 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = -1mA -30 - - V (BR)DSS GS D voltage V I = -1mA (BR)DSS D Breakdown voltage - -22 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = -30V, V = 0V - - -1 A DSS DS GS drain current I V = 20V, V = 0V Gate - Source leakage current - - 100 nA GSS GS DS V V = V , I = -1mA Gate threshold voltage -1.0 - -2.5 V GS(th) DS GS D V I = -1mA GS(th) D Gate threshold voltage - 2.9 - mV/ temperature coefficient T referenced to 25 j V = -10V, I = -10A - 8.7 11.2 GS D Static drain - source *5 R m DS(on) on - state resistance V = -4.5V, I = -10A - 11.9 14.8 GS D R Gate resistance f = 1MHz, open drain - 8.1 - G Forward Transfer *5 Y V = -5V, I = -10A 10.5 - - S fs DS D Admittance *1 Pw 10s, Duty cycle 1% *2 L 1mH, V = -15V, R = 25, Starting T = 25 Fig.3-1,3-2 DD G j *3 Mounted on a ceramic board (30300.8mm) *4 Mounted on a FR4 (25250.8mm) *5 Pulsed www.rohm.com 2/11 20181129 - Rev.001 2018 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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