Product Information

RRE02VTM4SFHTR

RRE02VTM4SFHTR electronic component of ROHM

Datasheet
ROHM Semiconductor Small power mold type (TUMD2SM) rectifying diode

Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.4735 ea
Line Total: USD 0.47

61029 - Global Stock
Ships to you between
Thu. 30 May to Mon. 03 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
61029 - WHS 1


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 1
Multiples : 1
1 : USD 0.4735
10 : USD 0.2716
100 : USD 0.1607
500 : USD 0.1333
1000 : USD 0.1022
3000 : USD 0.066
9000 : USD 0.0636

5820 - WHS 2


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 463
Multiples : 1
463 : USD 0.2157
500 : USD 0.21
1000 : USD 0.2058

8200 - WHS 3


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 399
Multiples : 1
399 : USD 0.1039
500 : USD 0.0948
1000 : USD 0.0814
2000 : USD 0.0769
3000 : USD 0.0744

2360 - WHS 4


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 463
Multiples : 1
463 : USD 0.2179

     
Manufacturer
Product Category
Mounting Style
Package / Case
Vr - Reverse Voltage
If - Forward Current
Type
Configuration
Vf - Forward Voltage
Max Surge Current
Ir - Reverse Current
Maximum Operating Temperature
Series
Qualification
Packaging
Product
Brand
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
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Rectifier Diode RRE02VTM4SFH Datasheet AEC-Q101 Qualified Series Dimensions (Unit : mm) Land size figure (Unit : mm) 0.17 0.10 Standard Rectifier 0.05 1.1 1.400.10 Application General rectification TUMD2SM 0~0.10 Features Structure cathode 1) Low forward voltage 0.800.05 2) Small mold type 0.20 0.60 ROHM : TUMD2SM 0.10 (TUMD2SM) dot (year week factory) + day anode Taping specifications (Unit : mm) Construction Silicon epitaxial planar type Absolute maximum ratings (T = 25C) a Parameter Symbol Conditions Limits Unit V Duty 0.5 400 Repetitive peak reverse voltage V RM V Reverse voltage Direct voltage 400 V R On glass epoxy substrate, I Average current 0.2 A o 60Hz half sin wave , Resistive load 60Hz half sin wave , Non-repetitive at T =25C Non-repetitive forward surge current I 1 j A FSM T Operating junction temperature 150 C j T Storage temperature 55 to 150 C stg Electrical characteristics (T = 25C) j Parameter Symbol Conditions Min. Typ. Max. Unit V I =0.2A Forward voltage - 0.95 1.1 V F F I V =400V Reverse current - 0.01 1 A R R www.rohm.com 2014 ROHM Co., Ltd. All rights reserved. 2014.12 - Rev.A 1/4 2.000.10 2.500.20 0.8 2.3Data Sheet RRE02VTM4SFH Electrical characteristic curves RRE02VTM4SFH 1 1000 T = 150 C j T = 125 C j 100 T = 150 C j 0.1 T = 75 C j T = 125 C j 10 T = 25 C j T = 75 C j 0.01 1 T = 25 C j 0.001 0.1 0 100 200 300 400 0 200 400 600 800 1000 1200 1400 FORWARD VOLTAGE : V (mV) REVERSE VOLTAGE : V (V) F R V -I CHARACTERISTICS V -I CHARACTERISTICS F F R R 10 10 f = 1MHz I FSM T = 25 C a 8.3ms 8.3ms 1cyc. 1 1 T = 25 C j 0.1 0.1 0 5 10 15 20 25 30 110 100 NUMBER OF CYCLES REVERSE VOLTAGE : V (V) R I -CYCLE CHARACTERISTICS FSM V -C CHARACTERISTICS R t www.rohm.com 2014 ROHM Co., Ltd. All rights reserved. 2014.12 - Rev.A 2/4 CAPACITANCE BETWEEN FORWARD CURRENT : I (A) F TERMINALS : C (pF) t PEAK SURGE REVERSE CURRENT : I (nA) R FORWARD CURRENT : I (A) FSM

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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