X-On Electronics has gained recognition as a prominent supplier of RRR040P03HZGTL MOSFETs across the USA, India, Europe, Australia, and various other global locations. RRR040P03HZGTL MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RRR040P03HZGTL ROHM

RRR040P03HZGTL electronic component of ROHM
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See Product Specifications
Part No.RRR040P03HZGTL
Manufacturer: ROHM
Category: MOSFETs
Description: P-Channel 30V 4A (Ta) 700mW (Ta) Surface Mount TSMT3
Datasheet: RRR040P03HZGTL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.5038 ea
Line Total: USD 0.5 
Availability - 8935
Ship by Tue. 03 Dec to Thu. 05 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
55
Ship by Thu. 12 Dec to Tue. 17 Dec
MOQ : 1
Multiples : 1
1 : USD 0.6655
10 : USD 0.6045
30 : USD 0.5717
100 : USD 0.5343
500 : USD 0.4933
1000 : USD 0.485

8935
Ship by Tue. 03 Dec to Thu. 05 Dec
MOQ : 1
Multiples : 1
1 : USD 0.5038
100 : USD 0.4125
500 : USD 0.3663
1000 : USD 0.3465
3000 : USD 0.308
6000 : USD 0.2959

   
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Qualification
Hts Code
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the RRR040P03HZGTL from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RRR040P03HZGTL and other electronic components in the MOSFETs category and beyond.

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RRR040P03HZG Datasheet Pch -30V -4A Small Signal MOSFET llOutline SOT-346T V -30V DSS SC-96 R (Max.) 45m DS(on) TSMT3 I 4A D P 1.0W D llInner circuit llFeatures 1) Low on - resistance 2) Built-in G-S Protection Diode 3) Small Surface Mount Package (TSMT3) 4) Pb-free lead plating ; RoHS compliant 5) AEC-Q101 Qualified llPackaging specifications Embossed Packing Tape Reel size (mm) 180 llApplication Tape width (mm) 8 Type DC/DC converters Basic ordering unit (pcs) 3000 Taping code TL Marking UG llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V -30 V DSS I Continuous drain current 4 A D *1 I Pulsed drain current 16 A DP V Gate - Source voltage 20 V GSS *2 P 1.0 W D Power dissipation *3 P 0.7 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/11 2018 ROHM Co., Ltd. All rights reserved. 20180703 - Rev.001 RRR040P03HZG Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *2 R - - 125 /W thJA Thermal resistance, junction - ambient *3 R - - 178 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = -1mA -30 - - V (BR)DSS GS D voltage V I = -1mA (BR)DSS D Breakdown voltage - -24.1 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = -30V, V = 0V - - -1 A DSS DS GS drain current I V = 20V, V = 0V Gate - Source leakage current - - 10 A GSS GS DS V Gate threshold voltage V = -10V, I = -1mA -1.0 - -2.5 V GS(th) DS D V I = -1mA GS(th) D Gate threshold voltage - 3.3 - mV/ temperature coefficient T referenced to 25 j V = -10V, I = -4A - 32 45 GS D Static drain - source *4 R V = -4.5V, I = -2A - 45 63 m DS(on) GS D on - state resistance V = -4.0V, I = -2A - 52 72 GS D R Gate resistance f = 1MHz, open drain - 13 - G Forward Transfer *4 |Y | V = -10V, I = -4A 2.7 - - S fs DS D Admittance *1 Pw 10s, Duty cycle 1% *2 Mounted on a ceramic board (30300.8mm) *3 Mounted on a FR4 (25250.8mm) *4 Pulsed www.rohm.com 2/11 20180703 - Rev.001 2018 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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