RSB33F2FHT106 ROHM

Data Sheet AEC-Q101 Qualified Bi direction ESD Protection Diode RSB33F2FH Applications Dimensions (Unit : mm) Land size figure (Unit : mm) ESD Protection 1.3 2.00.2 0.30.1 0.150.05 Each lead has same dimension 0.65 (3) Features 1)Small mold type. (UMD3) 2)High reliability. 0.8MIN. 3)Bi-directionality. 0 0.1 (2) (1) UMD3 0.65 0.65 0.70.1 1.30.1 Constructions 0.90.1 Silicon epitaxial planer Structure ROHM : UMD3 JEDEC : SOT-323 JEITA : SC-70 dot(year week factory) Taping dimensions (Unit : mm) 1.550.05 4.00.1 2.00.05 0.30.1 2.250.1 0.50.05 4.00.1 0 1.250.1 Absolute maximum ratings (Ta=25 C) Parameter Symbol Limits Unit Power dissipation(*) Pd 200 mW Junction temperature Tj 150 C Storage temperature Tstg 55 to +150 C (*)Total two elements Electrical characteristics (Ta=25 C) Parameter Symbol Min. Typ. Max. Unit Conditions V I =1mA Zener voltage 29.7 - 36.3 V Z Z Reverse current I - - 0.1 V =25V R R V =0V , f=1MHz Junction capacitance Ct - - 30 pF R *Zener voltage (Vz) shall be measured at 40ms after loading current. www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2011.11 - Rev.A 1/4 1.250.1 2.10.1 0.1Min 0.9MIN. 2.40.1 5.50.2 00.1 3.50.05 1.750.1 8.00.2 2.40.1 1.6Data Sheet RSB33F2FH 10 10 apply voltage apply voltage Ta=150C 1 1 Ta=25C Ta=150C Ta=25C Ta=125C 0.1 0.1 Ta=25C Ta=125C Ta=25C Ta=75C Ta=75C 0.01 0.01 25 30 35 40 45 25 30 35 40 45 ZENER VOLTAGE:Vz(V) ZENER VOLTAGE:Vz(V) Vz-Iz CHARACTERISTICS(1) Vz-Iz CHARACTERISTICS(2) 1000 1000 Ta=150C apply voltage 100 100 Ta=150C 10 10 Ta=125C Ta=125C 1 1 Ta=75C 0.1 0.1 Ta=75C apply voltage Ta=25C 0.01 0.01 Ta=25C 0.001 0.001 0 5 10 15 20 25 30 0 5 10 15 20 25 30 REVERSE VOLTAGEV (V) REVERSE VOLTAGEV (V) R R V -I CHARACTERISTICS(1) V -I CHARACTERISTICS(2) R R R R 100 100 f=1MHz f=1MHz apply voltage apply voltage 10 10 1 1 0 5 10 15 20 25 0 5 10 15 20 25 REVERSE VOLTAGE:V (V) REVERSE VOLTAGE:V (V) R R V -Ct CHARACTERISTICS(1) V -Ct CHARACTERISTICS(2) R R www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2/4 2011.11 - Rev.A CAPACITANCE BETWEEN REVERSE CURRENT:I (nA) ZENER CURRENT:Iz(mA) TERMINALS:Ct(pF) R CAPACITANCE BETWEEN REVERSE CURRENT:I (nA) R TERMINALS:Ct(pF) ZENER CURRENT:Iz(mA)