RSB5.6SMT2N ROHM

Data Sheet Bi direction ESD Protection Diode RSB5.6SM lApplications lDimensions (Unit : mm) lLand size figure (Unit : mm) ESD Protection 0.8 0.80.05 0.120.05 lFeatures 1)Ultra small mold type. (EMD2) 2)Bi direction high reliability. 3)High reliability. 4)By chip-mounter,automatic mounting is possible. EMD2 lConstruction lStructure 0.30.05 Silicon epitaxial planar 0.60.1 ROHM : EMD2 JEDEC :SOD-523 JEITA : SC-79 dot (year week factory) dot (productNo.) lTaping dimensions (Unit : mm) lAbsolute maximum ratings (Ta=25 C) Parameter Symbol Limits Unit Peak pulse power(tp=101000s) Ppk 10 W Power dissipation P 150 mW Junction temperature Tj 150 C Storage temperature Tstg -55 to +150 C Operation temperature range Topor -55 to +150 C lElectrical characteristics (Ta=25 C) Parameter Symbol Min. Typ. Max. Unit Conditions Zener voltage V I =1mA 4.76 - 6.44 V z Z Reverse current I - - 1.0 A V =2.5V R R V =0V , f=1MHz Capacitance between terminals Ct - 50.0 - pF R www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2011.10 - Rev.A 1/4 1.20.05 1.60.1 0.6 1.7Data Sheet RSB5.6SM 10 10 apply voltage apply voltage Ta=125 C 1 1 Ta=125 C Ta=75 C 0.1 0.1 Ta=75 C Ta=25 C Ta=25 C 0.01 0.01 Ta=-25 C Ta=-25 C 0.001 0.001 2 3 4 5 6 2 3 4 5 6 ZENER VOLTAGE:Vz(V) ZENER VOLTAGE:Vz(V) Vz-Iz CHARACTERISTICS(1) Vz-Iz CHARACTERISTICS(2) 10000 10000 apply voltage apply voltage 1000 1000 100 100 Ta=125 C Ta=125 C 10 10 1 1 Ta=75 C 0.1 Ta=75 C 0.1 Ta=25 C 0.01 0.01 Ta=25 C 0.001 0.001 0.0001 0.0001 0 1 2 3 0 1 2 3 REVERSE VOLTAGE V (V) REVERSE VOLTAGE V (V) R R V -I CHARACTERISTICS(1) V -I CHARACTERISTICS(2) R R R R 100 100 f=1MHz f=1MHz apply voltage apply voltage 10 10 0 1 2 3 4 0 1 2 3 4 REVERSE VOLTAGE:V (V) REVERSE VOLTAGE:V (V) R R V -Ct CHARACTERISTICS(1) V -Ct CHARACTERISTICS(2) R R www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2011.10 - Rev.A 2/4 REVERSE CURRENT:I (nA) ZENER CURRENT:Iz(mA) R CAPACITANCE BETWEEN TERMINALS:Ct(pF) REVERSE CURRENT:I (nA) CAPACITANCE BETWEEN R ZENER CURRENT:Iz(mA) TERMINALS:Ct(pF)