RSB6.8GT2R ROHM

RSB6.8G Diodes ESD Protection diode RSB6.8G z Application z External dimensions (Unit : mm) z Land size figure (Unit : mm) ESD Protection, bi direction z Features 1) Ultra small mold type. (VMD2) 2) High reliability. 3) Bi chip-mounter, automatic mounting is possible. z Structure z Construction dot (year week factory) Silicon epitaxial planar z Taping specifications z Absolute maximum ratings (Ta=25q C) Parameter Limits Symbol Unit Peak pulse power-1(tp=101000S) 10 Ppk W Power dissipation (*1 Pm100 W Junction temperature 150 Tj Storage temperature Tstg -55 to +150 Operating temperature -55 to +150 Topr z Electrical characteristics (Ta=25q C, Rating of per diode) Parameter Conditions Symbol Min. Typ. Max. Unit Zener voltage V 5.78 - 7.82 V I =1mA Z Z I Reverse current - - 0.50 A V =3.5V R R V =0V , f=1MHz Capacitance between terminals Ct - 15 - pF R Rev.A 1/2 RSB6.8G Diodes z Electrical characteristic curves Mounted on epoxy board Rev.A 2/2