VBUS54CV-HSF www.vishay.com Vishay Semiconductors 4-Line BUS-Port ESD Protection FEATURES Ultra compact LLP75-6L package 4-line USB ESD protection 6 5 4 Low leakage current Low load capacitance C = 1.2 pF D ESD immunity acc. IEC 61000-4-2 30 kV contact discharge 1 2 3 30 kV air discharge 20397 High surge current acc. IEC 61000-4-5 I > 11 A pp 20453 e4 - precious metal (e.g. Ag, Au, NiPd, NiPdAu), 1 (no Sn) MARKING (example only) Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 XX YY 21001 Dot = pin 1 marking XX = date code YY = type code (see table below) click logo to get started DESIGN SUPPORT TOOLS Models Available ORDERING INFORMATION TAPED UNITS PER REEL DEVICE NAME ORDERING CODE MINIMUM ORDER QUANTITY (8 mm TAPE ON 7 REEL) VBUS54CV-HSF VBUS54CV-HSF-G4-08 3000 15 000 PACKAGE DATA PACKAGE TYPE MOLDING COMPOUND MOISTURE DEVICE NAME WEIGHT SOLDERING CONDITIONS NAME CODE FLAMMABILITY RATING SENSITIVITY LEVEL MSL level 1 VBUS54CV-HSF LLP75-6L UC 4.2 mg UL 94 V-0 Peak temperature max. 260 C (according J-STD-020) ABSOLUTE MAXIMUM RATINGS VBUS54CV-HSF PARAMETER TEST CONDITIONS SYMBOL VALUE UNIT Pin 1, 3, 4 or 6 to pin 2 11 acc. IEC 61000-4-5, t = 8/20 s/single shot p Peak pulse current I A PPM Pin 5 to pin 2 13 acc. IEC 61000-4-5 t = 8/20 s single shot p Pin 1, 3, 4 or 6 to pin 2 242 acc. IEC 61000-4-5, t = 8/20 s/single shot p Peak pulse power P W PP Pin 5 to pin 2 246 = 8/20 s single shot acc. IEC 61000-4-5 t p Contact discharge acc. IEC 61000-4-2 10 pulses 30 ESD immunity V kV ESD Air discharge acc. IEC 61000-4-2 10 pulses 30 Operating temperature Junction temperature T -40 to +125 C J Storage temperature T -40 to +150 C STG Rev. 1.3, 04-Jan-2019 Document Number: 84145 1 For technical questions, contact: ESDprotection vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VBUS54CV-HSF www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS VBUS54CV-HSF (pin 1, 3, 4, or 6 to pin 2) (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT Protection paths Number of lines which can be protected N - - 4 lines channel Reverse stand-off voltage Max. reverse working voltage V -- 5.5 V RWM Reverse voltage at I = 0.1 A V 5.5 - - V R R Reverse current at V = 5.5 V I - 0.01 0.1 A RWM R Reverse breakdown voltage at I = 1 mA V 77.9 8.6 V R BR Reverse clamping voltage at I = 11 A V -18 22 V PP C Forward clamping voltage at I =11 A V -6.5 8 V PP F V (at I/O pin) = 0 V R Capacitance C -1.2 2.5 pF D V (at pin 5) = 5 V f = 1 MHz R Line symmetry Difference of the line capacitances dC -- 0.2 pF D ELECTRICAL CHARACTERISTICS (pin 5 to pin 2) (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT Reverse stand-off voltage Max. reverse working voltage V -- 5.5 V RWM Reverse voltage at I = 0.1 A pin 2 to pin 1 V 5.5 - - V R R Reverse current at V = 5.5 V I - 0.01 0.1 A RWM R Reverse breakdown voltage at I = 1 mA V 6.3 7.1 8 V R BR Reverse clamping voltage at I = 13 A V -18 22 V PP C Forward clamping voltage at I =13 A V -- 7 V PP F Capacitance V (at pin 5) = 0 V f = 1 MHz C - 190 - pF R D APPLICATION NOTE With the VBUS54CV-HSF a double, high speed USB-port can be protected against transient voltage signals. Negative transients will be clamped close below the ground level while positive transients will be clamped close above the working range. An avalanche diode clamps the supply line (V at pin 5) to ground (pin 2). The high speed data lines, D , D , D and D , BUS 1+ 2+ 1- 2- are connected to pin 1, 3, 4 and 6. As long as the signal voltage on the data lines is between the ground- and the V -level, BUS the low capacitance PN-diodes offer a very high isolation to V , ground and to the other data lines. But as soon as any BUS transient signal exceeds this working range, one of the PN-diodes gets in the forward mode and clamps the transient to ground or the avalanche break through voltage level. t R V BUS w E D i 1+ C D n 1- E 6 5 4 I U V S E B R - 1 2 3 P IC D o 2+ D r 2- t G ND 20399 Rev. 1.3, 04-Jan-2019 Document Number: 84145 2 For technical questions, contact: ESDprotection vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000