X-On Electronics has gained recognition as a prominent supplier of RSQ030N08HZGTR MOSFETs across the USA, India, Europe, Australia, and various other global locations. RSQ030N08HZGTR MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RSQ030N08HZGTR ROHM

RSQ030N08HZGTR electronic component of ROHM
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Part No.RSQ030N08HZGTR
Manufacturer: ROHM
Category: MOSFETs
Description: MOSFET 80V N-CHANNEL 80A
Datasheet: RSQ030N08HZGTR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.7348 ea
Line Total: USD 0.73 
Availability - 25028
Ship by Fri. 29 Nov to Tue. 03 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
97
Ship by Tue. 10 Dec to Fri. 13 Dec
MOQ : 1
Multiples : 1
1 : USD 0.7557
10 : USD 0.6405
30 : USD 0.5775
100 : USD 0.5064
500 : USD 0.475
1000 : USD 0.4606

25028
Ship by Fri. 29 Nov to Tue. 03 Dec
MOQ : 1
Multiples : 1
1 : USD 0.7348
10 : USD 0.5797
100 : USD 0.429
500 : USD 0.3553
1000 : USD 0.3311
3000 : USD 0.3036
6000 : USD 0.2926
24000 : USD 0.2915

   
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Qualification
Hts Code
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the RSQ030N08HZGTR from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RSQ030N08HZGTR and other electronic components in the MOSFETs category and beyond.

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RSQ030N08HZG Datasheet Nch 80V 3.0A Small Signal MOSFET llOutline SOT-457T V 80V DSS SC-95 R (Max.) 131m DS(on) TSMT6 I 3.0A D P 1.25W D llInner circuit llFeatures 1) Low on - resistance 2) Built-in G-S protection diode 3) Small surface mount package(TSMT6) 4) Pb-free lead plating RoHS compliant 5) AEC-Q101 Qualified llPackaging specifications Embossed Packing Tape Reel size (mm) 180 llApplication Tape width (mm) 8 Type Switching Basic ordering unit (pcs) 3000 Taping code TR Marking PJ llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V 80 V DSS I Continuous drain current 3.0 A D *1 I Pulsed drain current 12 A DP V Gate - Source voltage 20 V GSS *2 P 1.25 W D Power dissipation *3 P 0.95 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/11 2019 ROHM Co., Ltd. All rights reserved. 20190122 - Rev.002 RSQ030N08HZG Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *2 R - - 100 /W thJA Thermal resistance, junction - ambient *3 R - - 132 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 80 - - V (BR)DSS GS D voltage V I = 1mA (BR)DSS D Breakdown voltage - 81.3 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 80V, V = 0V - - 1 A DSS DS GS drain current I V = 20V, V = 0V Gate - Source leakage current - - 10 A GSS GS DS V Gate threshold voltage V = 10V, I = 1mA 1.0 - 2.5 V GS(th) DS D V I = 1mA GS(th) D Gate threshold voltage - -4.4 - mV/ temperature coefficient T referenced to 25 j V = 10V, I = 3.0A - 93 131 GS D Static drain - source *4 R V = 4.5V, I = 3.0A - 100 140 m DS(on) GS D on - state resistance V = 4.0V, I = 3.0A - 103 145 GS D R Gate resistance f = 1MHz, open drain - 7.0 - G Forward Transfer *4 Y V = 10V, I = 3.0A 2.5 - - S fs DS D Admittance *1 Pw10s , Duty cycle1% *2 Mounted on a ceramic board (30300.8mm) *3 Mounted on a FR4 (25250.8mm) *4 Pulsed www.rohm.com 2/11 20190122 - Rev.002 2019 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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