X-On Electronics has gained recognition as a prominent supplier of RTF016N05FRATL MOSFETs across the USA, India, Europe, Australia, and various other global locations. RTF016N05FRATL MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RTF016N05FRATL ROHM

RTF016N05FRATL electronic component of ROHM
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See Product Specifications
Part No.RTF016N05FRATL
Manufacturer: ROHM
Category: MOSFETs
Description: N-Channel 45V 1.6A (Ta) 800mW Surface Mount TUMT3
Datasheet: RTF016N05FRATL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.191 ea
Line Total: USD 573 
Availability - 0
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
6582
Ship by Fri. 29 Nov to Tue. 03 Dec
MOQ : 1
Multiples : 1
1 : USD 0.6138
10 : USD 0.4532
100 : USD 0.319
500 : USD 0.264
1000 : USD 0.2431
3000 : USD 0.2123
9000 : USD 0.2046
45000 : USD 0.1991

   
Manufacturer
Product Category
Package / Case
Packaging
Technology
Series
Part Status
Fet Type
Drain To Source Voltage Vdss
Current - Continuous Drain Id 25 C
Rds On Max Id Vgs
Vgsth Max Id
Gate Charge Qg Max Vgs
Vgs Max
Input Capacitance Ciss Max Vds
Fet Feature
Power Dissipation Max
Operating Temperature
Mounting Type
Supplier Device Package
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the RTF016N05FRATL from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RTF016N05FRATL and other electronic components in the MOSFETs category and beyond.

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RTF016N05FRA Datasheet Nch 45V 1.6A Small Signal MOSFET llOutline SOT-323T V 45V DSS TUMT3 R (Max.) 190m DS(on) I 1.6A D P 0.8W D llInner circuit llFeatures 1) Low on - resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TUMT3). 4) Pb-free lead plating RoHS compliant 5) AEC-Q101 Qualified llPackaging specifications Embossed Packing Tape Reel size (mm) 180 llApplication Tape width (mm) 8 Type Switching Quantity (pcs) 3000 Taping code TL Marking PU llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V 45 V DSS I Continuous drain current 1.6 A D *1 I Pulsed drain current 6.4 A DP V Gate - Source voltage 12 V GSS *2 P 0.8 W D Power dissipation *3 P 0.75 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/11 2019 ROHM Co., Ltd. All rights reserved. 20190527 - Rev.002 RTF016N05FRA Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *2 R - - 156 /W thJA Thermal resistance, junction - ambient *3 R - - 167 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 45 - - V (BR)DSS GS D voltage V I = 1mA (BR)DSS D Breakdown voltage - 46.8 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 45V, V = 0V - - 1 A DSS DS GS drain current I V = 12V, V = 0V Gate - Source leakage current - - 10 A GSS GS DS V Gate threshold voltage V = 10V, I = 1mA 0.5 - 1.5 V GS(th) DS D V I = 1mA GS(th) D Gate threshold voltage - -3.9 - mV/ temperature coefficient T referenced to 25 j V = 4.5V, I = 1.6A - 140 190 GS D Static drain - source *4 R V = 4.0V, I = 1.6A - 150 210 m DS(on) GS D on - state resistance V = 2.5V, I = 1.6A - 200 280 GS D R Gate resistance f = 1MHz, open drain - 9.7 - G Forward Transfer *4 Y V = 10V, I = 1.6A 1.5 - - S fs DS D Admittance *1 Pw 10s, Duty cycle 1% *2 Mounted on a ceramic board (30300.8mm) *3 Mounted on a FR4 (25250.8mm) *4 Pulsed www.rohm.com 2/11 20190527 - Rev.002 2019 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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