RV4E031RP HZG Datasheet Pch -30V -3.1A Small Signal MOSFET AEC-Q101 Qualified llOutline V -30V DSS R (Max.) 105m DS(on) DFN1616-6W I 3.1A D P 1.5W D llInner circuit llFeatures 1) Low on - resistance. 2) Small high power package 3) Low voltage drive(-4V) 4) 100% UIS tested. 5) Wettable Flank for automated optical solder inspection(AOI). Electrode part 130m guarantee. llPackaging specifications Embossed Packing Tape Reel size (mm) 180 llApplication Tape width (mm) 8 Type Switching circuits Quantity (pcs) 3000 High side load switch Taping code TCR1 High speed line driver Marking KY llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit V Drain - Source voltage -30 V DSS Continuous drain current I 3.1 A D *1 I Pulsed drain current 12 A DP V Gate - Source voltage 20 V GSS *2 Avalanche current, single pulse I 3.1 A AS *2 E Avalanche energy, single pulse 0.7 mJ AS *3 Power dissipation P 1.5 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/11 2020 ROHM Co., Ltd. All rights reserved. 20200409 - Rev.002 RV4E031RP HZG Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *3 R Thermal resistance, junction - ambient - - 83.4 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = -1mA -30 - - V (BR)DSS GS D voltage V I = -1mA (BR)DSS D Breakdown voltage - -24.1 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = -30V, V = 0V - - -1 A DSS DS GS drain current I Gate - Source leakage current V = 20V, V = 0V - - 10 A GSS GS DS Gate threshold voltage V V = -10V, I = -1mA -1.0 - -2.5 V GS(th) DS D V I = -1mA GS(th) D Gate threshold voltage - 3.3 - mV/ temperature coefficient T referenced to 25 j V = -10V, I = -3.1A - 75 105 GS D Static drain - source *4 R V = -4.5V, I = -1.5A - 108 152 m DS(on) GS D on - state resistance V = -4V, I = -1.5A - 122 172 GS D Forward Transfer *4 Y V = -10V, I = -3.1A 1.5 - - S fs DS D Admittance *1 Pw10s , Duty cycle 1% *2 L 0.1mH, V = -15V, R = 25, Starting T = 25 Fig.3-1,3-2 DD G j *3 Mounted on a Cu board (40mm40mm0.8mm) *4 Pulsed www.rohm.com 2/11 20200409 - Rev.002 2020 ROHM Co., Ltd. All rights reserved.