RV8C010UN HZG Datasheet Nch 20V 1A Small Signal MOSFET AEC-Q101 Qualified. llOutline V 20V DSS R (Max.) 470m DS(on) DFN1010-3W I 1.0A D P 1.0W D llInner circuit llFeatures 1) Leadless ultra small and exposed drain pad for excellent thermal conduction SMD plastic package (1.01.00.4mm) 2) Side wettable Flanks for automated optical solder inspection(AOI). Tin-plated 100% solderable side pads guarantees Min.125m llPackaging specifications 3) AEC-Q101 Qualified. 4) ESD protection up to 2kV (HBM) Embossed Packing 5) Very fast switching Tape 6) Ultra low voltage drive (2.5V drive) Type Reel size (mm) 180 llApplication Tape width (mm) 8.0 Switching circuits Quantity (pcs) 8000 Low-side loadswitch Taping code G2CR Relay driver Marking TJ llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit V Drain - Source voltage 20 V DSS I Continuous drain current 1.0 A D *1 I Pulsed drain current 2.0 A DP V Gate - Source voltage 8 V GSS *2 P Power dissipation 1.0 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/11 - Rev.001 2020 ROHM Co., Ltd. All rights reserved.RV8C010UN HZG Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *2 R Thermal resistance, junction - ambient - - 125.0 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 20 - - V (BR)DSS GS D voltage V I = 1mA (BR)DSS D Breakdown voltage - 29 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 20V, V = 0V - - 1 A DSS DS GS drain current I Gate - Source leakage current V = 8V, V = 0V - - 10 A GSS GS DS Gate threshold voltage V V = 10V, I = 1mA 0.3 - 1.0 V GS(th) DS D V I = 1mA GS(th) D Gate threshold voltage - -1.6 - mV/ temperature coefficient T referenced to 25 j V = 4.5V, I = 500mA - 340 470 GS D V = 2.5V, I = 500mA - 400 560 GS D Static drain - source *3 R V = 1.8V, I = 250mA - 470 650 m DS(on) GS D on - state resistance V = 1.5V, I = 100mA - 540 810 GS D V = 1.2V, I = 50mA - 700 1050 GS D Forward Transfer *3 Y V = 10V, I = 100mA 400 - - mS fs DS D Admittance *1 Pw10s , Duty cycle 1% *2 Mounted on a Cu board (40mm40mm0.8mm) *3 Pulsed www.rohm.com 2/10 - Rev.001 2020 ROHM Co., Ltd. All rights reserved.