RV8L002SN HZG Datasheet Nch 60V 250mA Small Signal MOSFET AEC-Q101 Qualified llOutline V 60V DSS R (Max.) 2.4 DS(on) DFN1010-3W I 250mA D P 1.0W D llInner circuit llFeatures 1) Leadless ultra small and exposed drain pad for excellent thermal conduction SMD plastic package (1.01.00.4mm) 2) Side wettable Flanks for automated optical solder inspection(AOI). Tin-plated 100% solderable side pads guarantees Min.125m llPackaging specifications 3) AEC-Q101 Qualified. 4) ESD protection up to 2kV (HBM) Embossed Packing 5) Very fast switching Tape 6) Ultra low voltage drive (2.5V drive) Type Reel size (mm) 180 llApplication Tape width (mm) 8.0 Switching circuits Quantity (pcs) 8000 Low-side loadswitch Taping code G2CR Relay driver Marking RKU llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit V Drain - Source voltage 60 V DSS I Continuous drain current 250 mA D *1 I Pulsed drain current 1.0 A DP V Gate - Source voltage 20 V GSS *2 P Power dissipation 1.0 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/11 - Rev.001 2020 ROHM Co., Ltd. All rights reserved.RV8L002SN HZG Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *2 R Thermal resistance, junction - ambient - - 125.0 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 60 - - V (BR)DSS GS D voltage V I = 1mA (BR)DSS D Breakdown voltage - 63.7 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 60V, V = 0V - - 1 A DSS DS GS drain current I Gate - Source leakage current V = 20V, V = 0V - - 10 A GSS GS DS Gate threshold voltage V V = 10V, I = 1mA 1.0 - 2.3 V GS(th) DS D V I = 1mA GS(th) D Gate threshold voltage - -2.8 - mV/ temperature coefficient T referenced to 25 j V = 10V, I = 250mA - 1.7 2.4 GS D V = 4.5V, I = 250mA - 2.1 3.0 GS D Static drain - source *4 R DS(on) on - state resistance V = 4.0V, I = 250mA - 2.3 3.2 GS D V = 2.5V, I = 10mA - 3.0 12.0 GS D Forward Transfer *4 Y V = 10V, I = 250mA 250 - - mS fs DS D Admittance *1 Pw10s , Duty cycle 1% *2 Mounted on a Cu board (40mm40mm0.8mm) *3 Pulsed *4 *5 www.rohm.com 2/11 - Rev.001 2020 ROHM Co., Ltd. All rights reserved.