X-On Electronics has gained recognition as a prominent supplier of RX3G07CGNC16 MOSFET across the USA, India, Europe, Australia, and various other global locations. RX3G07CGNC16 MOSFET are a product manufactured by ROHM. We provide cost-effective solutions for MOSFET, ensuring timely deliveries around the world.

RX3G07CGNC16 ROHM

RX3G07CGNC16 electronic component of ROHM
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See Product Specifications
Part No.RX3G07CGNC16
Manufacturer: ROHM
Category: MOSFET
Description: N-Channel 40V 70A (Tc) 78W (Tc) Through Hole TO-220AB
Datasheet: RX3G07CGNC16 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 2.3115 ea
Line Total: USD 2.31

Availability - 828
Ship by Mon. 29 Jul to Wed. 31 Jul
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
814
Ship by Mon. 29 Jul to Wed. 31 Jul
MOQ : 1
Multiples : 1
1 : USD 2.3115
10 : USD 1.9205
100 : USD 1.61
250 : USD 1.564
500 : USD 1.3915
1000 : USD 1.196
3000 : USD 1.196
5000 : USD 1.1845
10000 : USD 1.1477

   
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Hts Code
LoadingGif
 
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We are delighted to provide the RX3G07CGNC16 from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RX3G07CGNC16 and other electronic components in the MOSFET category and beyond.

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RX3G07CGN Datasheet Nch 40V 70A Power MOSFET llOutline V 40V DSS R (Max.) 4.7m DS(on) TO-220AB I 70A D P 78W D llFeatures llInner circuit 1) Low on - resistance 2) High power small mold package (TO220AB) 3) Pb-free plating RoHS compliant 4) 100% UIS tested llApplication llPackaging specifications Switching Packing Tube Quantity (pcs) 1000 Type Taping code C16 Marking RX3G07CGN llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit V Drain - Source voltage 40 V DSS *1 V = 10V I Continuous drain current 70 A GS D *2 I Pulsed drain current 140 A DP V Gate - Source voltage 20 V GSS *3 I Avalanche current, single pulse 30 A AS *3 E Avalanche energy, single pulse 35 mJ AS *1 P Power dissipation 78 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 2020 ROHM Co., Ltd. All rights reserved. 1/11 20200608 - Rev.001RX3G07CGN Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *1 R Thermal resistance, junction - case - - 1.6 /W thJC llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 40 - - V (BR)DSS GS D voltage V I = 1mA (BR)DSS D Breakdown voltage - 26.2 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 40V, V = 0V - - 1 A DSS DS GS drain current I Gate - Source leakage current V = 20V, V = 0V - - 500 nA GSS GS DS V V = V , I = 0.5mA Gate threshold voltage 1.0 - 2.5 V GS(th) DS GS D V I = 1mA GS(th) D Gate threshold voltage - -4.9 - mV/ temperature coefficient T referenced to 25 j V = 10V, I = 70A - 3.5 4.7 GS D Static drain - source *4 R m DS(on) on - state resistance V = 4.5V, I = 35A - 4.4 5.9 GS D R Gate resistance f = 1MHz, open drain - 3.4 - G Forward Transfer *4 Y V = 5V, I = 35A 35 - - S fs DS D Admittance *1 T =25 , Limited only by maximum temperature allowed. c *2 Pw 10s, Duty cycle 1% *3 L 0.05mH, V = 20V, R = 25, Starting T = 25 Fig.3-1,3-2 DD G j *4 Pulsed www.rohm.com 2/11 20200608 - Rev.001 2020 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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RHM
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ROHM Semiconductor

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