X-On Electronics has gained recognition as a prominent supplier of SCT3120AW7TL SiC MOSFETs across the USA, India, Europe, Australia, and various other global locations. SCT3120AW7TL SiC MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for SiC MOSFETs, ensuring timely deliveries around the world.

SCT3120AW7TL ROHM

SCT3120AW7TL electronic component of ROHM
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Part No.SCT3120AW7TL
Manufacturer: ROHM
Category: SiC MOSFETs
Description: SiC MOSFETs 650V 21A, 7-pin SMD, Trench-structure, Silicon-carbide (SiC) MOSFET
Datasheet: SCT3120AW7TL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 11.176 ea
Line Total: USD 11.18 
Availability - 2637
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2637
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 11.176
10 : USD 8.327
50 : USD 8.316
100 : USD 7.084
500 : USD 6.886
1000 : USD 6.875
2000 : USD 6.864

   
Manufacturer
Product Category
Mounting Style
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Package / Case
Hts Code
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the SCT3120AW7TL from our SiC MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SCT3120AW7TL and other electronic components in the SiC MOSFETs category and beyond.

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SCT3120AW7 Datasheet N-channel SiC power MOSFET lOutline TO-263-7L V 650V DSS R (Typ.) 120m DS(on) *1 I 21A D P 100W D lInner circuit lFeatures 1) Low on-resistance 2) Fast switching speed 3) Fast reverse recovery 4) Easy to parallel Please note Driver Source and Power Source are 5) Simple to drive not exchangeable. Their exchange might lead to malfunction. 6) Pb-free lead plating RoHS compliant lPackaging specifications Packing Embossed tape lApplication Solar inverters Reel size (mm) 330 DC/DC converters Tape width (mm) 24 Type Switch mode power supplies Basic ordering unit (pcs) 1000 Induction heating Taping code TL Motor drives Marking SCT3120AW7 lAbsolute maximum ratings (T = 25C) a Parameter Symbol Value Unit V Drain - Source Voltage 650 V DSS *1 T = 25C I 21 A c D Continuous Drain current *1 T = 100C 15 A I c D *2 Pulsed Drain current I 52 A D,pulse Gate - Source voltage (DC) V -4 to +22 V GSS *3 Gate - Source surge voltage (t < 300ns) V -4 to +26 V surge GSS surge *4 Recommended drive voltage V 0 / +18 V GS op Junction temperature T 175 C j T Range of storage temperature -55 to +175 C stg www.rohm.com TSQ50252-SCT3120AW7 2020 ROHM Co., Ltd. All rights reserved. 1/12 4.Aug.2020 - Rev.001 TSZ2211114001Datasheet SCT3120AW7 lElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. V = 0V, I = 1mA GS D Drain - Source breakdown V T = 25C 650 - - V (BR)DSS j voltage T = -55C 650 - - j V = 0V, V =650V GS DS Zero Gate voltage I T = 25C - 1 10 A DSS j Drain current T = 150C - 2 - j Gate - Source I V = +22V, V = 0V - - 100 nA GSS+ GS DS leakage current Gate - Source I V = V = 0V -4V, - - -100 nA GSS- GS DS leakage current V V = 10V, I = Gate threshold voltage 3.33mA 2.7 - 5.6 V GS (th) DS D V = 18V, I = 6.7A GS D Static Drain - Source *5 T = 25C - 120 156 m R j DS(on) on - state resistance T = 150C - 172 - j R Gate input resistance f = 1MHz, open drain - 18 - G lThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *6 R - 1.17 1.5 C/W Thermal resistance, junction - case thJC lTypical Transient Thermal Characteristics Symbol Value Unit Symbol Value Unit -1 -3 R C 1.9510 1.3810 th1 th1 -1 -2 R 3.4710 K/W C 1.4010 Ws/K th2 th2 -1 -3 R C 5.6010 8.6810 th3 th3 R R T th,n T th1 j c P C C D C th1 th2 th,n T a www.rohm.com TSQ50252-SCT3120AW7 2020 ROHM Co., Ltd. All rights reserved. 2/12 4.Aug.2020 - Rev.001 TSZ2211115001

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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