NPN small signal transistor SSTA13 Features Dimensions (Unit : mm) (1) High Current Gain. SSTA13 2.9 0.95 0.4 0.45 ( ) 3 Packaging specifications (2) (1) Package Taping 0.95 0.95 0.15 T116 Type Code 1.9 Basic ordering unit (pieces) 3000 (1)Emitter Each lead has same dimensions (2)Base SSTA13 (3)Collector Abbreviated symbol : R1M Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Collector-base voltage VCBO 30 V Collector-emitter voltage VCES 30 V Emitter-base voltage VEBO 10 V Collector current IC 0.3 A Collector power dissipation PC 0.2 W Junction temperature Tj 150 C Storage temperature Tstg 55 to 125 C Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Collector-emitter breakdown voltage BVCES 30 VIC= 100A BVCEO 30 V IC= 10A Collector-emitter breakdown voltage Emitter-base breakdown voltage BVEBO 10 V IE= 10A Collector-base cutoff current ICBO 0.1 A VCB= 30V Emitter-base cutoff current IEBO 0.1 A VEB= 10V Collector-emitter saturation voltage VCE(sat) 1.5 V IC/IB= 100mA/ 0.1mA Base-emitter voltage VBE(on) 2.0 V VCE= 5V, IC= 100mA 5000 VCE= 5V, IC= 10mA DC current transfer ratio hFE 10000 VCE= 5V, IC= 100mA Transition frequency fT 125 MHz VCE= 5V, IE= 10mA, f=100MHz Collector output capacitance Cob 5.4 pF VCB= 10V, f=100kHz, IE=0 Pulsed www.rohm.com c 2011.09 - Rev.B 2011 ROHM Co., Ltd. All rights reserved. 1/2 Not Recommended for New Designs 1.3 2.4 0.2Min. SSTA13 Data Sheet Electrical characteristics curves 2.2 500 100 Ta=25C Ta=25C 2.4 Ta=25C 20 18 VCE=5V 2.0 2.0 16 400 80 1.8 1.8 14 12 1.6 1.6 300 60 10 1.4 1.2 8.0 1.2 200 40 6.0 0.8 1.0 4.0 0.8 100 20 0.4 2.0 0.2 0.6 IB=0A IB=0A 0 0 0.4 0 1.0 2.0 0 1.0 2.0 3.0 4.0 5.0 1.0 2.0 5.0 10 20 50 100 200 500 1000 COLLECTOR - EMITTER VOLTAGE : VCE (V) COLLECTOR - EMITTER VOLTAGE : VCE (V) COLLECTOR CURRENT : IC (mA) Fig.1 Typical output characteristics ( ) Fig.2 Typical output characteristics ( ) Fig.3 Base emitter ON voltage vs. collector current 100k 100k 1.8 Ta=25C Ta=25C Ta=25C VCE=5V 1.6 IC/IB=1000 50k 50k VCE=10V Ta=25C 1.4 20k 20k 5V 1.2 3V 1.0 Ta=55C 10k 10k 0.8 5k 5k 0.6 0.4 2k 2k 0.2 1k 1k 0 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1000 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1000 1.0 2.0 5.0 10 20 50 100 200 500 1000 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) Fig.4 DC current gain vs. collector current ( ) Fig.5 DC current gain vs. collector current ( ) Fig.6 Collector emitter saturation voltage vs. collector current 100 1000 Ta=25C Ta=25C 2.2 Ta=25C f=1MHz VCE=5V IC/IB=1000 50 500 2.0 1.8 20 200 1.6 Cib 10 1.4 100 1.2 5 Cob 50 1.0 0.8 2 20 0.6 1 10 0.4 0.5 12 5 10 20 50 1.0 2.0 5.0 10 20 50 100 200 500 1000 12 5 10 20 50 100 200 500 1000 REVERSE BIAS VOLTAGE (V) COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) Fig.9 Capacitance vs. reverse bias voltage Fig.8 Current gain-bandwidth product Fig.7 Base emitter saturation voltage vs. collector current vs. collector current www.rohm.com c 2011.09 - Rev.B 2011 ROHM Co., Ltd. All rights reserved. 2/2 Not Recommended for New Designs BASE EMITTER SATURATION VOLTAGE : VBE(sat) (V) DC CURRENT GAIN : hFE COLLECTOR CURRENT : Ic (mA) CURRENT GAIN-BANDWIDTH PRODUCT (MHz) DC CURRENT GAIN : hFE COLLECTOR CURRENT : Ic (mA) CAPACITANCE (pF) COLLECTOR EMITTER SATURATION VOLTAGE BASE EMITTER VOLTAGE : VBE(on) (V) : VCE(sat) (V)