X-On Electronics has gained recognition as a prominent supplier of UMA11NTR Bipolar Transistors - Pre-Biased across the USA, India, Europe, Australia, and various other global locations. UMA11NTR Bipolar Transistors - Pre-Biased are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - Pre-Biased, ensuring timely deliveries around the world.

UMA11NTR ROHM

UMA11NTR electronic component of ROHM
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See Product Specifications
Part No.UMA11NTR
Manufacturer: ROHM
Category: Bipolar Transistors - Pre-Biased
Description: ROHM Semiconductor Bipolar Transistors - Pre-Biased DUAL PNP 50V 100MA
Datasheet: UMA11NTR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.4092 ea
Line Total: USD 0.41 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 0.4092
10 : USD 0.3014
100 : USD 0.1705
1000 : USD 0.088
3000 : USD 0.0682
9000 : USD 0.0605
24000 : USD 0.0594
45000 : USD 0.0572
99000 : USD 0.055

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Transistor Polarity
Typical Input Resistor
Typical Resistor Ratio
Mounting Style
Package / Case
DC Collector/Base Gain hFE Min
Collector- Emitter Voltage VCEO Max
Continuous Collector Current
Peak DC Collector Current
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Pd - Power Dissipation
Factory Pack Quantity :
Dc Current Gain Hfe Max
Height
Length
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the UMA11NTR from our Bipolar Transistors - Pre-Biased category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the UMA11NTR and other electronic components in the Bipolar Transistors - Pre-Biased category and beyond.

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EMA11 / UMA11N / FMA11A Transistors Emitter common (dual digital transistors) EMA11 / UMA11N / FMA11A z External dimensions (Unit : mm) z Features 1) Two DTA143Z chips in a EMT or UMT or SMT EMA11 package. ( ) ( ) 4 3 2) Mounting cost and area can be cut in half. ( ) 2 (5) (1) 1.2 1.6 z Structure All terminals have same dimensions Epitaxial planar type ROHM : EMT5 Abbreviated symbol: A11 PNP silicon transistor (Built-in resistor type) UMA11N The following characteristics apply to both DTr1 and DTr2. 1.25 2.1 z Equivalent circuit EMA11 / UMA11N FMA11A 0.1Min. All terminals have same dimensions (3) (2) (1) (3) (4) (5) ROHM : UMT5 R1 R1 R1 R1 R2 R2 R2 R2 Abbreviated symbol: A11 EIAJ : SC-88A DTr2 DTr1 DTr2 DTr1 FMA11A (4) (6) (2) (1) R1=4.7k R1=4.7k R2=47k R2=47k 1.6 2.8 z Packaging specifications Package Taping 0.3to0.6 Code T2R TR T148 All terminals have same dimensions Type Basic ordering unit (pieces) 8000 3000 3000 ROHM : SMT5 EIAJ : SC-74A Abbreviated symbol: A11 EMA11 UMA11N FMA11A 1/3 0.2 0.15 0.15 0.3 (4) (6) 0.22 0.13 ( ) (1) 2 0to0.1 0to0.1 (1) (3) ( ) 2 ( ) (5) 4 ( ) 3 0.65 0.65 0.5 0.5 0.7 0.95 0.95 1.0 0.8 1.9 0.5 1.3 0.9 1.6 2.9 1.1 2.0EMA11 / UMA11N / FMA11A Transistors z Absolute maximum ratings (Ta = 25C) Limits Unit Parameter Symbol Supply voltage VCC 50 V 30 Input voltage VIN V 5 IO 100 Output current mA IC (Max.) 100 EMA11 / UMA11N 150 (TOTAL) 1 Power Pd mW dissipation FMA11A 300 (TOTAL) 2 Junction temperature Tj C 150 Storage temperature Tstg 55 to +150 C 1 120mW per element must not be exceeded. 2 200mW per element must not be exceeded. z Electrical characteristics (Ta = 25C) Parameter Symbol Min. Typ. Max. Unit Conditions VI (off) 0.5 VCC=5V, IO=100A Input voltage V VI (on) 1.3 VO=0.3V, IO=5mA Output voltage VO (on) 0.1 0.3 V IO/II=5mA/0.25mA Input current II 1.8 mA VI=5V Output current IO (off) 0.5 A VCC=50V, VI=0V DC current gain GI 80 VO=5V, IO=10mA Transition frequency fT 250 MHz VCE=10mA, IE=5mA, f=100MHz Input resistance R1 3.29 4.7 6.11 k Resistance ratio R2/R1 8 10 12 Transition frequency of the device z Electrical characteristic curves 100 1k 10m VO=0.3V VO=5V VCC=5V 5m 50 500 Ta=100C 2m 25C 20 200 40C 1m 10 500 100 Ta=100C 200 5 50 Ta=40C 25C 100 25C 40C 2 100C 20 50 10 1 20 10 500m 5 5 200m 2 2 1 1 100m 1002005001m 2m 5m 10m 20m 50m 100m 0 0.5 1 1.5 2 2.5 3 1002005001m 2m 5m 10m 20m 50m100m OUTPUT CURRENT : IO (A) INPUT VOLTAGE : VI (off) (V) OUTPUT CURRENT : IO (A) Fig.1 Input voltage vs. output current Fig.2 Output current vs. input voltage Fig.3 DC current gain vs. output (ON characteristics) (OFF characteristics) current 2/3 INPUT VOLTAGE : VI (on) (V) OUTPUT CURRENT : Io (A) DC CURRENT GAIN : GI

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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