X-On Electronics has gained recognition as a prominent supplier of UMA1NTR Bipolar Transistors - Pre-Biased across the USA, India, Europe, Australia, and various other global locations. UMA1NTR Bipolar Transistors - Pre-Biased are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - Pre-Biased, ensuring timely deliveries around the world.

UMA1NTR ROHM

UMA1NTR electronic component of ROHM
UMA1NTR ROHM
UMA1NTR Bipolar Transistors - Pre-Biased
UMA1NTR  Semiconductors

Images are for reference only
See Product Specifications
Part No. UMA1NTR
Manufacturer: ROHM
Category: Bipolar Transistors - Pre-Biased
Description: ROHM Semiconductor Bipolar Transistors - Pre-Biased DUAL PNP 50V 100MA
Datasheet: UMA1NTR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.5319 ea
Line Total: USD 0.53 
Availability - 440
Ship by Wed. 09 Apr to Fri. 11 Apr
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
440
Ship by Wed. 09 Apr to Fri. 11 Apr
MOQ : 1
Multiples : 1
1 : USD 0.5319
10 : USD 0.3313
100 : USD 0.1997
500 : USD 0.1139
1000 : USD 0.0989
3000 : USD 0.082
6000 : USD 0.0734
9000 : USD 0.0638
24000 : USD 0.0553

2691
Ship by Fri. 11 Apr to Thu. 17 Apr
MOQ : 789
Multiples : 1
789 : USD 0.1761
1000 : USD 0.1509
2000 : USD 0.1421

7633
Ship by Fri. 11 Apr to Thu. 17 Apr
MOQ : 910
Multiples : 1
910 : USD 0.1045
1000 : USD 0.1011
2500 : USD 0.0981
5000 : USD 0.0917

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Transistor Polarity
Typical Input Resistor
Typical Resistor Ratio
Mounting Style
Package / Case
DC Collector/Base Gain hFE Min
Collector- Emitter Voltage VCEO Max
Continuous Collector Current
Peak DC Collector Current
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Pd - Power Dissipation
Factory Pack Quantity :
Height
Length
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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We are delighted to provide the UMA1NTR from our Bipolar Transistors - Pre-Biased category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the UMA1NTR and other electronic components in the Bipolar Transistors - Pre-Biased category and beyond.

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UMA1N / FMA1A Datasheet Emitter common(dual digital transistors) llOutline Parameter DTr1 and DTr2 SOT-353 SOT-25 V -50V CC I -100mA C(MAX.) R 22k 1 UMA1N FMA1A R (UMT5) (SMT5) 22k 2 llFeatures llInner circuit 1)Two DTA124E chips in UMT or SMT UMA1N package. 2)Mounting cost and area can be cut in half. FMA1A llApplication INVERTER, INTERFACE, DRIVER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-353 UMA1N 2021 TR 180 8 3000 A1 (UMT5) SOT-25 FMA1A 2928 T148 180 8 3000 A1 (SMT5) www.rohm.com 1/6 20151008 - Rev.002 2015 ROHM Co., Ltd. All rights reserved.UMA1N / FMA1A Datasheet llAbsolute maximum ratings (T = 25C) a <For DTr1 and DTr2 in common> Parameter Symbol Values Unit V Supply voltage -50 V CC V Input voltage -40 to 10 V IN I Output current -30 mA O *1 I Collector current -100 mA C(MAX) *2*3 P UMA1N 150 D Power dissipation mW/Total *2*4 P FMA1A 300 D T Junction temperature 150 j Range of storage temperature T -55 to +150 stg llElectrical characteristics (T = 25C) a <For DTr1 and DTr2 in common> Values Parameter Symbol Conditions Unit Min. Typ. Max. V V = -5V, I = -100A - - -0.5 I(off) CC O Input voltage V V V = -0.2V, I = -5mA -3.0 - - I(on) O O V Output voltage I = -10mA, I = -0.5mA - -100 -300 mV O(on) O I I V = -5V Input current - - -360 A I I I V = -50V, V = 0V Output current - - -500 nA O(off) CC I G DC current gain V = -5V, I = -5mA 56 - - - I O O R Input resistance - 15.4 22 28.6 k 1 R /R Resistance ratio - 0.8 1.0 1.2 - 2 1 V = -10V, I = 5mA, CE E *1 f Transition frequency - 250 - MHz T f = 100MHz *1 Characteristics of built-in transistor. *2 Each terminal mounted on a reference land. *3 120mW per element must not be exceeded. *4 200mW per element must not be exceeded. www.rohm.com 2/6 20151008 - Rev.002 2015 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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