EMB10 / UMB10N / IMB10A Datasheet PNP -100mA -50V Complex Digital Transistors (Bias Resistor Built-in Transistors) Outline EMT6 UMT6 Parameter Tr1 and Tr2 (6) (6) (5) (5) V 50V (4) CC (4) (1) (1) (2) (2) I 100mA C(MAX.) (3) (3) R 2.2k 1 EMB10 UMB10N R 47k (SC-107C) SOT-363 (SC-88) 2 SMT6 (4) (5) Features (6) (3) 1) Built-In Biasing Resistors. (2) (1) 2) Two DTA123J chips in one package. 3) Built-in bias resistors enable the configuration of IMB10A SOT-457 (SC-74) an inverter circuit without connecting external input resistors (see inner circuit). 4) The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing Inner circuit of the input. They also have the advantage of EMB10 / UMB10N IMB10A completely eliminating parasitic effects. OUT IN GND OUT IN GND 5) Only the on/off conditions need to be set for (6) (5) (4) (4) (5) (6) operation, making the circuit design easy. 6) Lead Free/RoHS Compliant. Application (1) (2) (3) (3) (2) (1) GND IN OUT Inverter circuit, Interface circuit, Driver circuit GND IN OUT Packaging specifications Package Basic Taping Reel size Tape width Part No. Package size ordering Marking code (mm) (mm) (mm) unit (pcs) EMB10 EMT6 1616 T2R 180 8 8,000 B10 UMB10N UMT6 2021 TN 180 8 3,000 B10 IMB10A SMT6 2928 T110 180 8 3,000 B10 www.rohm.com 2014 ROHM Co., Ltd. All rights reserved. 2014.10 - Rev.E 1/7EMB10 / UMB10N / IMB10A Data Sheet Absolute maximum ratings (Ta = 25C) <For Tr1 and Tr2 in common> Parameter Symbol Values Unit V V Supply voltage 50 CC V 12 to 5 V Input voltage IN I Output current 100 mA O *1 Collector current I 100 mA C(MAX.) *3 Power dissipation EMB10 / UMB10N mW 150 (Total) *2 P D *4 IMB10A mW 300 (Total) T 150 C Junction temperature j T C Range of storage temperature 55 to 150 stg Electrical characteristics(Ta = 25C) <For Tr1 and Tr2 in common> Parameter Symbol Conditions Min. Typ. Max. Unit V V = 5V, I = 100A -- 0.5 I(off) CC O Input voltage V V V = 0.3V, I = 5mA 1.1 - - O O I(on) V I / I = 5mA / 0.25mA Output voltage - 0.1 0.3 V O(on) O I I V = 5V Input current -- 3.6 mA I I Output current I V = 50V, V = 0V -- 0.5 A O(off) CC I DC current gain G V = 5V, I = 10mA 80 --- I O O R Input resistance - 1.54 2.2 2.86 k 1 R /R - Resistance ratio 17 21 26 - 2 1 V = 10V, I = 5mA, *1 CE E Transition frequency f - 250 - MHz T f = 100MHz *1 Characteristics of built-in transistor *2 Each terminal mounted on a reference footprint *3 120mW per element must not be exceeded. *4 200mW per element must not be exceeded. www.rohm.com 2014 ROHM Co., Ltd. All rights reserved. 2014.10 - Rev.E 2/7