EMB3 / UMB3N / IMB3A Datasheet PNP -100mA -50V Complex Digital Transistors (Bias Resistor Built-in Transistors) lOutline EMT6 UMT6 Parameter Tr1 and Tr2 (6) (6) (5) (5) V -50V CEO (4) (4) (1) (1) (2) I (2) -100mA C(MAX.) (3) (3) R 4.7k W 1 EMB3 UMB3N (SC-107C) SOT-363 (SC-88) SMT6 (4) (5) lFeatures (6) 1) Built-In Biasing Resistors. (3) (2) (1) 2) Two DTA143T chips in one package. 3) Built-in bias resistors enable the configuration of IMB3A SOT-457 (SC-74) an inverter circuit without connecting external input resistors (see inner circuit). 4) The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing lInner circuit of the input. They also have the advantage of IMB3A EMB3 / UMB3N completely eliminating parasitic effects. Collector Base Emitter Collector Base Emitter 5) Only the on/off conditions need to be set for (6) (5) (4) (4) (5) (6) operation, making the circuit design easy. 6) Lead Free/RoHS Compliant. lApplication (1) (2) (3) (3) (2) (1) Emitter Base Collector Emitter Base Collector Inverter circuit, Interface circuit, Driver circuit l Packaging specifications Package Basic Taping Reel size Tape width Part No. Package size ordering Marking code (mm) (mm) (mm) unit (pcs) EMB3 EMT6 1616 T2R 180 8 8,000 B3 UMB3N UMT6 2021 TR 180 8 3,000 B3 IMB3A SMT6 2928 T108 180 8 3,000 B3 www.rohm.com 2012 ROHM Co., Ltd. All rights reserved. 2012.06 - Rev.C 1/6Data Sheet EMB3 / UMB3N / IMB3A lAbsolute maximum ratings (Ta = 25C) <For Tr1 and Tr2 in common> Parameter Symbol Values Unit V V Collector-base voltage -50 CBO V -50 V Collector-emitter voltage CEO V Emitter-base voltage -5 V EBO *1 Collector current I -100 mA C(MAX.) *3 Collector Power dissipation EMB3 / UMB3N mW 150 (Total) *2 P D *4 IMB3A mW 300 (Total) T 150 C Junction temperature j T C Range of storage temperature -55 to +150 stg lElectrical characteristics(Ta = 25C) <For Tr1 and Tr2 in common> Parameter Symbol Conditions Min. Typ. Max. Unit Collector-base breakdown voltage BV I = -50 mA - - V -50 CBO C BV I = -1mA Collector-emitter breakdown voltage -50 - - V C CEO BV I = -50 mA Emitter-base breakdown voltage -5 - - V EBO E I V = -50V Collector cut-off current - - -0.5 mA CBO CB Emitter cut-off current I V = -4V - - -0.5 mA EBO EB Collector-emitter saturation voltage V I / I = -5mA / -0.25mA - - V C B -0.3 CE(sat) h V = -5V , I = -1mA , DC current gain 100 250 600 - CE C FE R - Input resistance 3.29 4.7 6.11 k W 1 V = -10V, I = 5mA, *1 CE E Transition frequency f - 250 - MHz T f = 100MHz *1 Characteristics of built-in transistor *2 Each terminal mounted on a reference footprint *3 120mW per element must not be exceeded. *4 200mW per element must not be exceeded. www.rohm.com 2012 ROHM Co., Ltd. All rights reserved. 2012.06 - Rev.C 2/6