X-On Electronics has gained recognition as a prominent supplier of UMB4NTN Bipolar Transistors - Pre-Biased across the USA, India, Europe, Australia, and various other global locations. UMB4NTN Bipolar Transistors - Pre-Biased are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - Pre-Biased, ensuring timely deliveries around the world.

UMB4NTN ROHM

UMB4NTN electronic component of ROHM
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See Product Specifications
Part No.UMB4NTN
Manufacturer: ROHM
Category: Bipolar Transistors - Pre-Biased
Description: ROHM Semiconductor Bipolar Transistors - Pre-Biased DUAL PNP 50V 100MA
Datasheet: UMB4NTN Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
594: USD 0.0662 ea
Line Total: USD 39.32 
Availability - 2885
Ship by Thu. 26 Dec to Wed. 01 Jan
MOQ: 594  Multiples: 1
Pack Size: 1

 UMB4NTN More Buying Options & Price Grid(s)

Availability Price Quantity
97
Ship by Thu. 26 Dec to Wed. 01 Jan
MOQ : 100
Multiples : 1
100 : USD 1.0277

2885
Ship by Thu. 26 Dec to Wed. 01 Jan
MOQ : 594
Multiples : 1
594 : USD 0.0662
1000 : USD 0.0624
2000 : USD 0.0609

Specifications

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Transistor Polarity
Typical Input Resistor
Mounting Style
Package / Case
DC Collector/Base Gain hFE Min
Collector- Emitter Voltage VCEO Max
Continuous Collector Current
Peak DC Collector Current
Maximum Operating Temperature
Series
Packaging
Emitter- Base Voltage Vebo
Brand
Pd - Power Dissipation
Factory Pack Quantity :
Height
Length
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the UMB4NTN from our Bipolar Transistors - Pre-Biased category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the UMB4NTN and other electronic components in the Bipolar Transistors - Pre-Biased category and beyond.

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Additional Infomation About Product

EMB4 / UMB4N General purpose (dual digital transistor) Datasheet llOutline Parameter DTr1 and DTr2 SOT-563 SOT-363 V -50V CEO I -100mA C R 10k 1 EMB4 UMB4N (EMT6) (UMT6) llFeatures llInner circuit 1)Two DTA114T chips in a EMT or UMT package. 2)Mounting possible with EMT3 or UMT3 automatic mounting machines. 3)Transistor elements are independent, eliminating interference. 4)Mounting cost and area can be cut in half. llApplication INVERTER, INTERFACE, DRIVER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-563 EMB4 1616 T2R 180 8 8000 B4 (EMT6) SOT-363 UMB4N 2021 TN 180 8 3000 B4 (UMT6) www.rohm.com 1/5 20151118 - Rev.002 2015 ROHM Co., Ltd. All rights reserved.EMB4 / UMB4N Datasheet llAbsolute maximum ratings (T = 25C) a <For DTr1 and DTr2 in common> Parameter Symbol Values Unit V Collector-base voltage -50 V CBO Collector-emitter voltage V -50 V CEO Emitter-base voltage V -5 V EBO I Collector current -100 mA C *1*2 P EMB4 150 D Power dissipation mW/Total *1*2 P UMB4N 150 D T Junction temperature 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a <For DTr1 and DTr2 in common> Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = -50A -50 - - V CBO C voltage Collector-emitter breakdown BV I = -1mA -50 - - V CEO C voltage Emitter-base breakdown voltage BV I = -50A -5 - - V EBO E Collector cut-off current I V = -50V - - -500 nA CBO CB Emitter cut-off current I V = -4V - - -500 nA EBO EB Collector-emitter saturation voltage V I = -10mA, I = -1mA - - -300 mV CE(sat) C B h DC current gain V = -5V, I = -1mA 100 250 600 - FE CE C R Input resistance - 7 10 13 k 1 V = -10V, I = 5mA, CE E *3 f Transition frequency - 250 - MHz T f = 100MHz *1 Each terminal mounted on a reference land. *2 120mW per element must not be exceeded. *3 Characteristics of built-in transistor. www.rohm.com 2/5 20151118 - Rev.002 2015 ROHM Co., Ltd. All rights reserved.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

LAPIS Semiconductor may also be referenced as

RHE
RHM
ROHM Semicon
ROHM Semiconductor

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