EMB6 / UMB6N General purpose (dual digital transistor) Datasheet llOutline Parameter DTr1 and DTr2 SOT-563 SOT-363 V -50V CC I -100mA C(MAX.) R 47k 1 EMB6 UMB6N R (EMT6) (UMT6) 47k 2 llFeatures llInner circuit 1)Two DTA144E chips in a EMT or UMT package. 2)Mounting possible with EMT3 or UMT3 automatic mounting machines. 3)Transistor elements are independent, eliminating interference. 4)Mounting cost and area can be cut in half. llApplication INVERTER, INTERFACE, DRIVER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-563 EMB6 1616 T2R 180 8 8000 B6 (EMT6) SOT-363 UMB6N 2021 TR 180 8 3000 B6 (UMT6) www.rohm.com 1/6 20151118 - Rev.002 2015 ROHM Co., Ltd. All rights reserved. Not Recommended for New DesignsEMB6 / UMB6N Datasheet llAbsolute maximum ratings (T = 25C) a <For DTr1 and DTr2 in common> Parameter Symbol Values Unit V Supply voltage -50 V CC V Input voltage -40 to 10 V IN I Output current -30 mA O *1 I Collector current -100 mA C(MAX) *2*3 P EMB6 150 D Power dissipation mW/Total *2*3 P UMB6N 150 D T Junction temperature 150 j Range of storage temperature T -55 to +150 stg llElectrical characteristics (T = 25C) a <For DTr1 and DTr2 in common> Values Parameter Symbol Conditions Unit Min. Typ. Max. V V = -5V, I = -100A - - -0.5 I(off) CC O Input voltage V V V = -0.3V, I = -2mA -3.0 - - I(on) O O V I = -10mA, I = -0.5mA Output voltage - -100 -300 mV O(on) O I I Input current V = -5V - - -180 A I I I V = -50V, V = 0V Output current - - -500 nA O(off) CC I G V = -5V, I = -5mA DC current gain 68 - - - I O O R Input resistance - 32.9 47 61.1 k 1 R /R Resistance ratio - 0.8 1.0 1.2 - 2 1 V = -10V, I = 5mA, CE E *1 f Transition frequency - 250 - MHz T f = 100MHz *1 Characteristics of built-in transistor. *2 Each terminal mounted on a reference land. *3 120mW per element must not be exceeded. www.rohm.com 2/6 20151118 - Rev.002 2015 ROHM Co., Ltd. All rights reserved. Not Recommended for New Designs