EMC4 / UMC4N / FMC4A Transistors Power management (dual digital transistors) EMC4 / UMC4N / FMC4A zz zz External dimensions (Units : mm) z z z z Features 1) Both the DTA114Y chip and DTC114E chip in a EMT EMC4 or UMT or SMT package. ( ) (3) 2) Ideal for power switch circuits. 4 (2) (5) (1) 3) Mounting cost and area can be cut in half. 1.2 1.6 Each lead has same dimensions zz zz Structure ROHM : EMT5 Epitaxial planar type Abbreviated symbol : C4 NPN / PNP silicon transistor (Built-in resistor type.) UMC4N z z Equivalent circuit z z 1.25 EMC4 / UMC4N FMC4A 2.1 (3) (2) (1) (3) (4) (5) R1 R1 R2 R2 DTr1 DTr1 0.1Min. R1=47k R1=47k R2 DTr1 R2 DTr1 R2=47k R2=47k DTr2 DTr2 Each lead has same dimensions DTr2 DTr2 R1 R1 ROHM : UMT5 R1=10k R1=10k R2=47k R2=47k (4) (5) (2) (1) EIAJ : SC-88A Abbreviated symbol : C4 FMC4A zz zz Packaging specifications Package Taping 1.6 Code T2R TR T148 2.8 Basic ordering 8000 3000 3000 Type unit (pieces) 0.3to0.6 Each lead has same dimensions EMC4 ROHM : SMT5 EIAJ : SC-74A UMC4N FMC4A Abbreviated symbol : C4 0.15 0.3 0.2 0.15 0.13 0.22 ( ) (2) 1 (4) (5) 0to0.1 0to0.1 (1) ( ) (4) 3 (5) (3) (2) 0.5 0.5 0.95 0.95 1.0 0.7 0.65 0.65 0.8 1.9 0.5 1.6 2.9 1.1 0.9 1.3 2.0EMC4 / UMC4N / FMC4A Transistors zz zz Absolute maximum ratings (Ta = 25C) Limits Parameter Symbol Unit DTr1 DTr2 Supply voltage VCC 50 50 V 40 40 Input voltage VIN V 10 6 IO 30 100 Output current mA IC (Max.) 100 100 EMC4, UMC4N 150 (TOTAL) 1 Power Pd mW dissipation FM4A 300 (TOTAL) 2 Tj 150 C Junction temperature Tstg 55+150 C Storage temperature 1 120mW per element must not be exceeded. 2 200mW per element must not be exceeded. zz zz Electrical characteristics (Ta = 25C) DTr1 Parameter Symbol Min. Typ. Max. Unit Conditions 0.5 VCC=5V, IO=100 A VI (off) Input voltage V VI (on) 3 VO=0.3V, IO=2mA Output voltage 0.1 0.3 V IO=10mA, II=0.5mA VO (on) Input current II 0.18 mA VI=5V Output current 0.5 A VCC=50V, VI=0V IO (off) DC current gain GI 68 VO=5V, IO=5mA Transition frequency fT 250 MHz VCE=10mA, IE=5mA, f=100MHz Input resistance R1 32.9 47 61.1 k Resistance ratio R2/R1 0.8 1 1.2 Transition frequency of the device DTr2 Parameter Symbol Min. Typ. Max. Unit Conditions 0.3 VCC=5V, IO=100 A VI (off) Input voltage V 1.4 VO=0.3V, IO=1mA VI (on) Output voltage VO (on) 0.1 0.3 V IO=5mA, II=0.25mA Input current II 0.88 mA VI=5V Output current 0.5 A VCC=50V, VI=0V IO (off) DC current gain GI 68 VO=5V, IO=5mA Transition frequency fT 250 MHz VCE=10mA, IE=5mA, f=100MHz Input resistance R1 7 10 13 k Resistance ratio R2/R1 3.7 4.7 5.7 Transition frequency of the device