UMD25N General purpose (dual digital transistor) Datasheet <For DTr1(NPN)> llOutline Parameter Value SOT-363 V 50V CC SC-88 I 100mA C(MAX.) R 2.2k 1 R 47k UMT6 2 <For DTr2(PNP)> Parameter Value V -50V CC I -100mA C(MAX.) R 2.2k 1 R 47k 2 llFeatures llInner circuit 1)Both the DTA123J chip and DTC123J chip in a UMT package. 2)Mounting possible with UMT3 automatic mounting machines. 3)Transistor elements are independent, eliminating interference. 4)Mounting cost and area can be cut in half. llApplication INVERTER, INTERFACE, DRIVER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-363 UMD25N 2021 TR 180 8 3000 D25 (UMT6) www.rohm.com 1/7 20161221 - Rev.001 2017 ROHM Co., Ltd. All rights reserved.UMD25N Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol DTr1(NPN) DTr2(PNP) Unit V Supply voltage 50 -50 V CC V Input voltage -5 to 12 -12 to 5 V IN I Output current 100 -100 mA O *1 Collector current I 100 -100 mA C(MAX) *2*3 P Power dissipation 150 mW/Total D Junction temperature T 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) <For DTr1(NPN)> a Values Parameter Symbol Conditions Unit Min. Typ. Max. V V = 5V, I = 100A - - 0.5 I(off) CC O Input voltage V V V = 0.3V, I = 5mA 1.1 - - I(on) O O V Output voltage I = 5mA, I = 0.25mA - 100 300 mV O(on) O I Input current I V = 5V - - 3.6 mA I I I Output current V = 50V, V = 0V - - 500 nA O(off) CC I DC current gain G V = 5V, I = 10mA 80 - - - I O O R Input resistance - 1.54 2.2 2.86 k 1 R /R Resistance ratio - 17 21 26 - 2 1 V = 10V, I = -5mA, CE E *1 f Transition frequency - 250 - MHz T f = 100MHz llElectrical characteristics (T = 25C) <For DTr2(PNP)> a Values Parameter Symbol Conditions Unit Min. Typ. Max. V V = -5V, I = -100A - - -0.5 I(off) CC O Input voltage V V V = -0.3V, I = -5mA -1.1 - - I(on) O O Output voltage V I = -5mA, I = -0.25mA - -100 -300 mV O(on) O I I Input current V = -5V - - -3.6 mA I I I Output current V = -50V, V = 0V - - -500 nA O(off) CC I DC current gain G V = -5V, I = -10mA 80 - - - I O O R Input resistance - 1.54 2.2 2.86 k 1 Resistance ratio R /R - 17 21 26 - 2 1 V = -10V, I = 5mA, CE E *1 f Transition frequency - 250 - MHz T f = 100MHz *1 Characteristics of built-in transistor. *2 Each terminal mounted on a reference and. *3 120mW per element must not be exceeded. *4 200mW per element must not be exceeded. www.rohm.com 2/7 20161221 - Rev.001 2017 ROHM Co., Ltd. All rights reserved.