UMD2NTR ROHM

EMD2 / UMD2N / IMD2A Datasheet General purpose (dual digital transistor) <For DTr1(NPN)> llOutline Parameter Value SOT-563 SOT-363 V 50V CC I 100mA C(MAX.) R 22k 1 EMD2 UMD2N R (EMT6) (UMT6) 22k 2 SOT-457 <For DTr2(PNP)> Parameter Value V -50V CC I -100mA C(MAX.) IMD2A R (SMT6) 22k 1 R 22k 2 llFeatures llInner circuit 1)Both the DTA124E chip and DTC124E EMD2 / UMD2N chip in a EMT or UMT or SMT package. 2)Mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines. 3)Transistor elements are independent, eliminating interference. 4)Mounting cost and area can be cut in half. IMD2A llApplication INVERTER, INTERFACE, DRIVER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-563 EMD2 1616 T2R 180 8 8000 D2 (EMT6) SOT-363 UMD2N 2021 TR 180 8 3000 D2 (UMT6) SOT-457 IMD2A 2928 T108 180 8 3000 D2 (SMT6) www.rohm.com 1/9 20151030 - Rev.002 2015 ROHM Co., Ltd. All rights reserved.EMD2 / UMD2N / IMD2A Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol DTr1(NPN) DTr2(PNP) Unit V Supply voltage 50 -50 V CC V Input voltage -10 to 40 -40 to 10 V IN I Output current 30 -30 mA O *1 Collector current I 100 -100 mA C(MAX) *2*3 P EMD2/ UMD2N 150 D Power dissipation mW/Total *2*4 P IMD2A 300 D T Junction temperature 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) <For DTr1(NPN)> a Values Parameter Symbol Conditions Unit Min. Typ. Max. V V = 5V, I = 100A - - 0.5 I(off) CC O Input voltage V V V = 0.2V, I = 5mA 3.0 - - I(on) O O Output voltage V I = 10mA, I = 0.5mA - 100 300 mV O(on) O I I Input current V = 5V - - 360 A I I I Output current V = 50V, V = 0V - - 500 nA O(off) CC I DC current gain G V = 5V, I = 5mA 56 - - - I O O R Input resistance - 15.4 22 28.6 k 1 R /R Resistance ratio - 0.8 1.0 1.2 - 2 1 V = 10V, I = -5mA, CE E *1 f Transition frequency - 250 - MHz T f = 100MHz llElectrical characteristics (T = 25C) <For DTr2(PNP)> a Values Parameter Symbol Conditions Unit Min. Typ. Max. V V = -5V, I = -100A - - -0.5 I(off) CC O Input voltage V V V = -0.2V, I = -5mA -3.0 - - I(on) O O V Output voltage I = -10mA, I = -0.5mA - -100 -300 mV O(on) O I I Input current V = -5V - - -360 A I I Output current I V = -50V, V = 0V - - -500 nA O(off) CC I G DC current gain V = -5V, I = -5mA 56 - - - I O O Input resistance R - 15.4 22 28.6 k 1 R /R Resistance ratio - 0.8 1.0 1.2 - 2 1 V = -10V, I = 5mA, CE E *1 f Transition frequency - 250 - MHz T f = 100MHz *1 Characteristics of built-in transistor. *2 Each terminal mounted on a reference and. *3 120mW per element must not be exceeded. *4 200mW per element must not be exceeded. www.rohm.com 2/9 20151030 - Rev.002 2015 ROHM Co., Ltd. All rights reserved.