EMD3FHA / UMD3NFHA / IMD3AFRA EMD3 / UMD3N / IMD3A Datasheet NPN + PNP Complex Digital Transistors (Bias Resistor Built-in Transistors) AEC-Q101 Qualified <For DTr1(NPN)> lOutline (6) EMT6 UMT6 Parameter Value (5) (6) (4) (5) V (4) 50V CC (1) (1) (2) (2) I 100mA C(MAX.) (3) (3) R 10k W 1 EMD3FHAEMD3 UMD3NFHA UMD3N (SC-107C) SOT-363 (SC-88) R 10k W 2 SMT6 (4) (5) (6) <For DTr2(PNP)> (3) Parameter Value (2) (1) V -50V CC IMD3AFRA IMD3A SOT-457 (SC-74) I -100mA C(MAX.) R 10k W 1 R 10k W 2 lFeatures lInner circuit OUT IN GND 1) Both the DTC114E chip and DTA114E chip (6) (5) (4) in one package. 2) Built-in bias resistors enable the configuration of R 1 R 2 DTr1 an inverter circuit without connecting external DTr2 R 2 R 1 input resistors (see inner circuit). 3) The bias resistors consist of thin-film resistors (1) (2) (3) with complete isolation to allow negative biasing GND IN OUT of the input. They also have the advantage of EMD3FHA / UMD3NFHA EMD3 / UMD3N completely eliminating parasitic effects. 4) Only the on/off conditions need to be set for OUT IN GND (4) (5) (6) operation, making the circuit design easy. 5) Lead Free/RoHS Compliant. R 1 R 2 DTr2 DTr1 R lApplication 2 R 1 Inverter circuit, Interface circuit, Driver circuit (3) (2) (1) GND IN OUT IMD3AFRA IMD3A lPackaging specifications Package Basic Taping Reel size Tape width Part No. Package size ordering Marking code (mm) (mm) (mm) unit (pcs) EMD3FHAEMD3 EMT6 1616 T2R 180 8 8,000 D3 UMD3NFHAUMD3N UMT6 2021 TR 180 8 3,000 D3 IMD3AFRA IMD3A SMT6 2928 T108 180 8 3,000 D3 www.rohm.com 2013 ROHM Co., Ltd. All rights reserved. 2013.07 - Rev.E 1/8EMD3FHA / UMD3NFHA / IMD3AFRA Data Sheet EMD3 / UMD3N / IMD3A lAbsolute maximum ratings (Ta = 25C) Parameter Symbol DTr1(NPN) DTr2(PNP) Unit V Supply voltage 50 -50 V CC V Input voltage -10 to +40 -40 to +10 V IN I Output current 50 -50 mA O *1 Collector current 100 -100 mA I C(MAX.) *3 EMD3FHAEMD3 / UM / UMD3NFHAD3N mW 150 (Total) *2 Power dissipation P D *4 IMD3AFRAIMD3A mW 300 (Total) Junction temperature T 150 C j T Range of storage temperature -55 to +150 C stg lElectrical characteristics(Ta = 25C) <For DTr1(NPN)> Parameter Symbol Conditions Min. Typ. Max. Unit V V = 5V, I = 100mA - - 0.5 I(off) CC O Input voltage V V V = 0.3V, I = 10mA 3.0 - - I(on) O O Output voltage V I / I = 10mA / 0.5mA - 0.1 0.3 V O(on) O I Input current I V = 5V - - 0.88 mA I I I V = 50V, V = 0V Output current - - 0.5 mA O(off) CC I G V = 5V, I = 5mA DC current gain 30 - - - I O O R Input resistance - 7 10 13 k W 1 R /R Resistance ratio - 0.8 1 1.2 - 2 1 V = 10V, I = -5mA *1 CE E Transition frequency - 250 - MHz f T f = 100MHz lElectrical characteristics(Ta = 25C) <For DTr2(PNP)> Parameter Symbol Conditions Min. Typ. Max. Unit V V = -5V, I = -100mA - - -0.5 I(off) CC O Input voltage V V V = -0.3V, I = -10mA -3.0 - - I(on) O O V Output voltage I / I = -10mA / -0.5mA - -0.1 -0.3 V O(on) O I I Input current V = -5V - - -0.88 mA I I Output current I V = -50V, V = 0V - - -0.5 mA O(off) CC I DC current gain G V = -5V, I = -5mA 30 - - - I O O Input resistance R - 7 10 13 k W 1 R /R Resistance ratio - 0.8 1 1.2 - 2 1 V = -10V, I = 5mA *1 CE E Transition frequency f - 250 - MHz T f = 100MHz *1 Characteristics of built-in transistor *2 Each terminal mounted on a reference footprint *3 120mW per element must not be exceeded. *4 200mW per element must not be exceeded. www.rohm.com 2013 ROHM Co., Ltd. All rights reserved. 2013.07 - Rev.E 2/8