EMD6 / UMD6N / IMD6A Datasheet NPN + PNP Complex Digital Transistors (Bias Resistor Built-in Transistors) <For DTr1(NPN)> Outline EMT6 UMT6 Parameter Value (6) (6) (5) (5) V 50V (4) CEO (4) (1) (1) I (2) 100mA (2) C (3) (3) R 4.7k 1 EMD6 UMD6N (SC-107C) SOT-363 (SC-88) SMT6 <For DTr2(PNP)> (4) (5) Parameter Value (6) (3) V 50V (2) CEO (1) I 100mA C IMD6A R SOT-457 (SC-74) 4.7k 1 Features Inner circuit 1) Both the DTC143T chip and DTA143T chip Collector Base Emitter (6) (5) (4) in one package. 2) Built-in bias resistors enable the configuration of DTr1 an inverter circuit without connecting external DTr2 input resistors (see inner circuit). 3) The bias resistors consist of thin-film resistors (1) (2) (3) with complete isolation to allow negative biasing Emitter Base Collector of the input. They also have the advantage of EMD6 / UMD6N completely eliminating parasitic effects. 4) Only the on/off conditions need to be set for Collector Base Emitter (4) (5) (6) operation, making the circuit design easy. 5) Lead Free/RoHS Compliant. DTr2 DTr1 Application Inverter circuit, Interface circuit, Driver circuit (3) (2) (1) Emitter Base Collector IMD6A Packaging specifications Package Basic Taping Reel size Tape width Part No. Package size ordering Marking code (mm) (mm) (mm) unit (pcs) EMD6 EMT6 1616 T2R 180 8 8,000 D6 UMD6N UMT6 2021 TR 180 8 3,000 D6 IMD6A SMT6 2928 T108 180 8 3,000 D6 www.rohm.com 2014 ROHM Co., Ltd. All rights reserved. 2014.12 - Rev.C 1/7Data Sheet EMD6 / UMD6N / IMD6A Absolute maximum ratings (Ta = 25 C) Parameter Symbol DTr1(NPN) DTr2(PNP) Unit Collector-base voltage V 50 V 50 CBO Collector-emitter voltage V 50 V 50 CEO V Emitter-base voltage 5 5 V EBO I Collector current 100 100 mA C *3 EMD6 / UMD6N mW 150 (Total) *2 Collector Power dissipation P C *4 IMD6A mW 300 (Total) T Junction temperature 150 C j Range of storage temperature T C 55 to 150 stg Electrical characteristics(Ta = 25C) <For DTr1(NPN)> Parameter Symbol Conditions Min. Typ. Max. Unit BV I = 50 A Collector-base breakdown voltage 50 - - CBO C BV I = 1mA Collector-emitter breakdown voltage 50 - - V CEO C BV Emitter-base breakdown voltage I = 50 A 5- - EBO E I V = 50V Collector cut-off current - - 500 nA CBO CB Emitter cut-off current I V = 4V - - 500 nA EBO EB Collector-emitter saturation voltage V I / I = 5mA / 0.25mA - - 300 mV CE(sat) C B DC current gain h V = 5V, I = 1mA 100 300 600 - FE CE C R - 3.29 4.7 6.11 - Input resistance 1 V = 10V, I = 5mA *1 CE E Transition frequency f - 250 - MHz T f = 100MHz Electrical characteristics(Ta = 25C) <For DTr2(PNP)> Parameter Conditions Min. Typ. Max. Unit Symbol Collector-base breakdown voltage BV I = 50A -- 50 CBO C Collector-emitter breakdown voltage BV I = 1mA -- V 50 CEO C Emitter-base breakdown voltage BV I = 50A -- 5 EBO E I V = 50V Collector cut-off current -- 500 nA CBO CB I V = 4V Emitter cut-off current -- 500 nA EBO EB V Collector-emitter saturation voltage I / I = 5mA / 0.25mA -- 300 mV CE(sat) C B h DC current gain V = 5V, I = 1mA 100 300 600 - FE CE C R Input resistance - 3.29 4.7 6.11 - 1 V = 10V, I = 5mA *1 CE E Transition frequency - 250 - MHz f T f = 100MHz *1 Characteristics of built-in transistor *2 Each terminal mounted on a reference footprint *3 120mW per element must not be exceeded. *4 200mW per element must not be exceeded. www.rohm.com 2014 ROHM Co., Ltd. All rights reserved. 2014.12 - Rev.C 2/7