EMD9 / UMD9N / IMD9A Datasheet NPN + PNP Complex Digital Transistors (Bias Resistor Built-in Transistors) <For DTr1(NPN)> Outline EMT6 UMT6 Parameter Value (6) (6) (5) (5) (4) V (4) 50V CC (1) (1) (2) I 100mA C(MAX.) (2) (3) (3) R 10k 1 EMD9 UMD9N (SC-107C) SOT-363 (SC-88) R 47k 2 SMT6 (4) (5) (6) <For DTr2(PNP)> (3) Parameter Value (2) (1) V 50V CC IMD9A SOT-457 (SC-74) I 100mA C(MAX.) R 10k 1 R 47k 2 Inner circuit Features OUT IN GND (6) (5) (4) 1) Both the DTC114Y chip and DTA114Y chip in one package. R 1 R 2 DTr1 2) Built-in bias resistors enable the configuration of DTr2 R 2 an inverter circuit without connecting external R 1 input resistors (see inner circuit). (1) (2) (3) 3) The bias resistors consist of thin-film resistors GND IN OUT with complete isolation to allow negative biasing EMD9 / UMD9N of the input. They also have the advantage of completely eliminating parasitic effects. OUT IN GND (4) (5) (6) 4) Only the on/off conditions need to be set for operation, making the circuit design easy. R 1 R 2 5) Lead Free/RoHS Compliant. DTr2 DTr1 R 2 R 1 Application Inverter circuit, Interface circuit, Driver circuit (3) (2) (1) GND IN OUT IMD9A Packaging specifications Package Basic Taping Reel size Tape width Part No. Package size ordering Marking code (mm) (mm) (mm) unit (pcs) EMD9 EMT6 1616 T2R 180 8 8,000 D9 UMD9N UMT6 2021 TR 180 8 3,000 D9 IMD9A SMT6 2928 T108 180 8 3,000 D9 www.rohm.com 2014 ROHM Co., Ltd. All rights reserved. 2014.12 - Rev.F 1/8Data Sheet EMD9 / UMD9N / IMD9A Absolute maximum ratings (Ta = 25 C) Parameter Symbol DTr1(NPN) DTr2(PNP) Unit Supply voltage V 50 V 50 CC Input voltage V V 6 to 40 40 to 6 IN I Output current 70 70 mA O *1 Collector current I 100 100 mA C(MAX.) *3 EMD9 / UMD9N mW 150 (Total) *2 Power dissipation P D *4 IMD9A mW 300 (Total) T Junction temperature 150 C j Range of storage temperature T C 55 to 150 stg Electrical characteristics(Ta = 25C) <For DTr1(NPN)> Parameter Symbol Conditions Min. Typ. Max. Unit V V = 5V, I = 100 A - - 0.3 I(off) CC O Input voltage V V V = 0.3V, I = 1mA 1.4 - - I(on) O O V I / I = 5mA / 0.25mA Output voltage - 0.1 0.3 V O(on) O I I V = 5V Input current - - 0.88 mA I I Output current I V = 50V, V = 0V - - 0.5 A O(off) CC I DC current gain G V = 5V, I = 5mA 68 - - - I O O Input resistance R - 710 13 k 1 Resistance ratio R /R - 3.7 4.7 5.7 - 2 1 V = 10V, I = 5mA *1 CE E Transition frequency f - 250 - MHz T f = 100MHz Electrical characteristics(Ta = 25C) <For DTr2(PNP)> Parameter Symbol Conditions Min. Typ. Max. Unit V V = 5V, I = 100A -- 0.3 I(off) CC O Input voltage V V V = 0.3V, I = 1mA -- 1.4 I(on) O O Output voltage V I / I = 5mA / 0.25mA - V 0.1 0.3 O(on) O I I V = 5V Input current -- 0.88 mA I I I V = 50V, V = 0V Output current -- 0.5 A O(off) CC I G DC current gain V = 5V, I = 5mA 68 - - - I O O R Input resistance - 710 13 k 1 R /R Resistance ratio - 3.7 4.7 5.7 - 2 1 V = 10V, I = 5mA *1 CE E Transition frequency - 250 - MHz f T f = 100MHz *1 Characteristics of built-in transistor *2 Each terminal mounted on a reference footprint *3 120mW per element must not be exceeded. *4 200mW per element must not be exceeded. www.rohm.com 2014 ROHM Co., Ltd. All rights reserved. 2014.12 - Rev.F 2/8