X-On Electronics has gained recognition as a prominent supplier of UMG1NTR Bipolar Transistors - Pre-Biased across the USA, India, Europe, Australia, and various other global locations. UMG1NTR Bipolar Transistors - Pre-Biased are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - Pre-Biased, ensuring timely deliveries around the world.

UMG1NTR ROHM

UMG1NTR electronic component of ROHM
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See Product Specifications
Part No.UMG1NTR
Manufacturer: ROHM
Category: Bipolar Transistors - Pre-Biased
Description: ROHM Semiconductor Bipolar Transistors - Pre-Biased DUAL NPN 50V 30MA
Datasheet: UMG1NTR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.418 ea
Line Total: USD 0.42 
Availability - 2852
Ship by Thu. 26 Dec to Mon. 30 Dec
MOQ: 1  Multiples: 1
Pack Size: 1

 UMG1NTR More Buying Options & Price Grid(s)

Availability Price Quantity
2852
Ship by Thu. 26 Dec to Mon. 30 Dec
MOQ : 1
Multiples : 1
1 : USD 0.418
10 : USD 0.2552
100 : USD 0.1221
1000 : USD 0.11
3000 : USD 0.088
9000 : USD 0.077
24000 : USD 0.0748
45000 : USD 0.0726
99000 : USD 0.0715

2910
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 365
Multiples : 1
365 : USD 0.2702
500 : USD 0.2605
1000 : USD 0.252
2500 : USD 0.2445

1612
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 127
Multiples : 1
127 : USD 0.3115
200 : USD 0.2612
500 : USD 0.1951
1000 : USD 0.1747

438
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 365
Multiples : 1
365 : USD 0.2702

Specifications

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Transistor Polarity
Typical Input Resistor
Typical Resistor Ratio
Mounting Style
Package / Case
DC Collector/Base Gain hFE Min
Continuous Collector Current
Peak DC Collector Current
Maximum Operating Temperature
Series
Packaging
Brand
Factory Pack Quantity :
Height
Length
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the UMG1NTR from our Bipolar Transistors - Pre-Biased category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the UMG1NTR and other electronic components in the Bipolar Transistors - Pre-Biased category and beyond.

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Additional Infomation About Product

EMG1 / UMG1N / FMG1A Emitter common(dual digital transistors) Datasheet llOutline Parameter DTr1 and DTr2 SOT-553 SOT-353 V 50V CC I 100mA C(MAX.) R 22k 1 EMG1 UMG1N R 22k (EMT5) (UMT5) 2 SOT-25 llFeatures 1)Two DTC124E chips in a EMT or UMT or SMT package. FMG1A 2)Mounting cost and area can be cut in half. (SMT5) llInner circuit EMG1 / UMG1N FMG1A llApplication INVERTER, INTERFACE, DRIVER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-553 EMG1 1616 T2R 180 8 8000 G1 (EMT5) SOT-353 UMG1N 2021 TR 180 8 3000 G1 (UMT5) SOT-25 FMG1A 2928 T148 180 8 3000 G1 (SMT5) www.rohm.com 1/7 20151001 - Rev.002 2015 ROHM Co., Ltd. All rights reserved.EMG1 / UMG1N / FMG1A Datasheet llAbsolute maximum ratings (T = 25C) a <For DTr1 and DTr2 in common> Parameter Symbol Values Unit V Supply voltage 50 V CC V Input voltage -10 to 40 V IN I Output current 30 mA O *1 I Collector current 100 mA C(MAX) *2*3 P EMG1 150 D *2*3 P Power dissipation UMG1N 150 mW D *2*4 FMG1A P 300 D T Junction temperature 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a <For DTr1 and DTr2 in common> Values Parameter Symbol Conditions Unit Min. Typ. Max. V V = 5V, I = 100A - - 0.5 I(off) CC O Input voltage V V V = 0.2V, I = 5mA 3.0 - - I(on) O O V I = 10mA, I = 0.5mA Output voltage - 100 300 mV O(on) O I I Input current V = 5V - - 360 A I I I V = 50V, V = 0V Output current - - 500 nA O(off) CC I G DC current gain V = 5V, I = 5mA 56 - - - I O O R Input resistance - 15.4 22 28.6 k 1 R /R Resistance ratio - 0.8 1.0 1.2 - 2 1 V = 10V, I = -5mA, CE E *1 f Transition frequency - 250 - MHz T f = 100MHz *1 Characteristics of built-in transistor. *2 Each terminal mounted on a reference land. *3 120mW per element must not be exceeded. *4 200mW per element must not be exceeded. www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2/7 20151001 - Rev.002

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

LAPIS Semiconductor may also be referenced as

RHE
RHM
ROHM Semicon
ROHM Semiconductor

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