X-On Electronics has gained recognition as a prominent supplier of UMG4NTR Bipolar Transistors - Pre-Biased across the USA, India, Europe, Australia, and various other global locations. UMG4NTR Bipolar Transistors - Pre-Biased are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - Pre-Biased, ensuring timely deliveries around the world.

UMG4NTR ROHM

UMG4NTR electronic component of ROHM
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See Product Specifications
Part No.UMG4NTR
Manufacturer: ROHM
Category: Bipolar Transistors - Pre-Biased
Description: Transistors Switching - Resistor Biased DUAL NPN 50V 100MA SOT-353
Datasheet: UMG4NTR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
396: USD 0.1027 ea
Line Total: USD 40.67 
Availability - 5820
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ: 396  Multiples: 1
Pack Size: 1

 UMG4NTR More Buying Options & Price Grid(s)

Availability Price Quantity
5820
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 396
Multiples : 1
396 : USD 0.1027
615 : USD 0.0661
1000 : USD 0.0638
2000 : USD 0.0605
3000 : USD 0.0578

2910
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 365
Multiples : 1
365 : USD 0.2791
500 : USD 0.2691
1000 : USD 0.2603
2500 : USD 0.2526

Specifications

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Transistor Polarity
Typical Input Resistor
Mounting Style
Package / Case
DC Collector/Base Gain hFE Min
Collector- Emitter Voltage VCEO Max
Continuous Collector Current
Peak DC Collector Current
Maximum Operating Temperature
Series
Packaging
Emitter- Base Voltage Vebo
Brand
Power Dissipation
Factory Pack Quantity :
Dc Current Gain Hfe Max
Height
Length
Width
Cnhts
Hts Code
Mxhts
Pd - Power Dissipation
Product Type
Subcategory
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the UMG4NTR from our Bipolar Transistors - Pre-Biased category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the UMG4NTR and other electronic components in the Bipolar Transistors - Pre-Biased category and beyond.

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Additional Infomation About Product

EMG4 / UMG4N / FMG4A Datasheet Emitter common(dual digital transistors) llOutline Parameter DTr1 and DTr2 SOT-553 SOT-353 V 50V CEO I 100mA C R 10k 1 EMG4 UMG4N (EMT5) (UMT5) SOT-25 llFeatures 1)Two DTC114T chips in a EMT or UMT or SMT package. FMG4A 2)Mounting cost and area can be cut in half. (SMT5) llInner circuit EMG4 / UMG4N FMG4A llApplication INVERTER, INTERFACE, DRIVER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-553 EMG4 1616 T2R 180 8 8000 G4 (EMT5) SOT-353 UMG4N 2021 TR 180 8 3000 G4 (UMT5) SOT-25 FMG4A 2928 T148 180 8 3000 G4 (SMT5) www.rohm.com 1/6 20151019 - Rev.002 2015 ROHM Co., Ltd. All rights reserved.EMG4 / UMG4N / FMG4A Datasheet llAbsolute maximum ratings (T = 25C) a <For DTr1 and DTr2 in common> Parameter Symbol Values Unit V Collector-base voltage 50 V CBO V Collector-emitter voltage 50 V CEO V Emitter-base voltage 5 V EBO I Collector current 100 mA C *1*2 P EMG4 150 D *1*2 P Power dissipation UMG4N 150 mW/Total D *1*3 FMG4A P 300 D T Junction temperature 150 j Range of storage temperature T -55 to +150 stg llElectrical characteristics (T = 25C) a <For DTr1 and DTr2 in common> Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = 50A 50 - - V CBO C voltage Collector-emitter breakdown BV I = 1mA 50 - - V CEO C voltage BV Emitter-base breakdown voltage I = 50A 5 - - V EBO E I V = 50V Collector cut-off current - - 500 nA CBO CB I V = 4V Emitter cut-off current - - 500 nA EBO EB Collector-emitter saturation voltage V I = 10mA, I = 1mA - - 300 mV C B CE(sat) h V = 5V, I = 1mA DC current gain 100 250 600 - FE CE C R Input resistance - 7 10 13 k 1 V = 10V, I = -5mA, CE E *4 f Transition frequency - 250 - MHz T f = 100MHz *1 Each terminal mounted on a reference land. *2 120mW per element must not be exceeded. *3 200mW per element must not be exceeded. *4 Characteristics of built-in transistor. www.rohm.com 2/6 2015 ROHM Co., Ltd. All rights reserved. 20151019 - Rev.002

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

LAPIS Semiconductor may also be referenced as

RHE
RHM
ROHM Semicon
ROHM Semiconductor

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