X-On Electronics has gained recognition as a prominent supplier of UMG5NTR Bipolar Transistors - Pre-Biased across the USA, India, Europe, Australia, and various other global locations. UMG5NTR Bipolar Transistors - Pre-Biased are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - Pre-Biased, ensuring timely deliveries around the world.

UMG5NTR ROHM

Hot UMG5NTR electronic component of ROHM
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See Product Specifications
Part No.UMG5NTR
Manufacturer: ROHM
Category: Bipolar Transistors - Pre-Biased
Description: ROHM Semiconductor Bipolar Transistors - Pre-Biased DUAL NPN 50V 100MA
Datasheet: UMG5NTR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.068 ea
Line Total: USD 0.07 
Availability - 54
Ship by Mon. 06 Jan to Thu. 09 Jan
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
54
Ship by Mon. 06 Jan to Thu. 09 Jan
MOQ : 1
Multiples : 1
1 : USD 0.068
10 : USD 0.0553
30 : USD 0.05
100 : USD 0.0432
500 : USD 0.0403
1000 : USD 0.0385

8019
Ship by Thu. 26 Dec to Mon. 30 Dec
MOQ : 1
Multiples : 1
1 : USD 0.3157
10 : USD 0.2068
100 : USD 0.1045
1000 : USD 0.0891
3000 : USD 0.066
9000 : USD 0.0627

2725
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 365
Multiples : 1
365 : USD 0.2791
500 : USD 0.2691
1000 : USD 0.2603
2500 : USD 0.2526

172948
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 158
Multiples : 1
158 : USD 0.2585
200 : USD 0.247
500 : USD 0.1837
1000 : USD 0.1625
2000 : USD 0.154
3000 : USD 0.1232
12000 : USD 0.1156
24000 : USD 0.106
96000 : USD 0.0954

   
Manufacturer
Product Category
RoHS - XON
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Configuration
Transistor Polarity
Typical Input Resistor
Typical Resistor Ratio
Mounting Style
Package / Case
DC Collector/Base Gain hFE Min
Collector- Emitter Voltage VCEO Max
Continuous Collector Current
Peak DC Collector Current
Minimum Operating Temperature
Maximum Operating Temperature
Series
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Brand
Pd - Power Dissipation
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Mxhts
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We are delighted to provide the UMG5NTR from our Bipolar Transistors - Pre-Biased category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the UMG5NTR and other electronic components in the Bipolar Transistors - Pre-Biased category and beyond.

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EMG5 / UMG5N Emitter common (dual digital transistor) Datasheet llOutline Parameter DTr1 and DTr2 SOT-553 SOT-353 V 50V CC I 100mA C(MAX.) R 10k 1 EMG5 UMG5N R (EMT5) (UMT5) 47k 2 llFeatures llInner circuit 1)Two DTC114Y chips in a EMT or UMT package 2)Mounting cost and area can be cut in half. llApplication INVERTER, INTERFACE, DRIVER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-553 EMG5 1616 T2R 180 8 8000 G5 (EMT5) SOT-353 UMG5N 2021 TR 180 8 3000 G5 (UMT5) www.rohm.com 1/6 20151201 - Rev.002 2015 ROHM Co., Ltd. All rights reserved.EMG5 / UMG5N Datasheet llAbsolute maximum ratings (T = 25C) a <For DTr1 and DTr2 in common> Parameter Symbol Values Unit V Supply voltage 50 V CC V Input voltage -6 to 40 V IN I Output current 70 mA O *1 I Collector current 100 mA C(MAX) *2*3 P EMG5 150 D Power dissipation mW/Total *2*3 P UMG5N 150 D T Junction temperature 150 j Range of storage temperature T -55 to +150 stg llElectrical characteristics (T = 25C) a <For DTr1 and DTr2 in common> Values Parameter Symbol Conditions Unit Min. Typ. Max. V V = 5V, I = 100A - - 0.3 I(off) CC O Input voltage V V V = 0.3V, I = 1mA 1.4 - - I(on) O O V I = 5mA, I = 0.25mA Output voltage - 100 300 mV O(on) O I I Input current V = 5V - - 880 A I I I V = 50V, V = 0V Output current - - 500 nA O(off) CC I G V = 5V, I = 5mA DC current gain 68 - - - I O O R Input resistance - 7 10 13 k 1 R /R Resistance ratio - 3.7 4.7 5.7 - 2 1 V = 10V, I = -5mA, CE E *1 f Transition frequency - 250 - MHz T f = 100MHz *1 Characteristics of built-in transistor. *2 Each terminal mounted on a reference land. *3 120mW per element must not be exceeded. www.rohm.com 2/6 20151201 - Rev.002 2015 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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