EMH11 / UMH11N / IMH11A Datasheet NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors) Outline EMT6 UMT6 Parameter Tr1 and Tr2 (6) (6) (5) (5) V 50V CC (4) (4) (1) (1) I 100mA (2) (2) C(MAX.) (3) (3) R 10k 1 EMH11 UMH11N R 10k (SC-107C) SOT-363 (SC-88) 2 SMT6 (4) (5) Features (6) 1) Built-In Biasing Resistors, R = R = 10k . 1 2 (3) (2) 2) Two DTC114E chips in one package. (1) 3) Built-in bias resistors enable the configuration of IMH11A SOT-457 (SC-74) an inverter circuit without connecting external input resistors (see inner circuit). 4) The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing Inner circuit of the input. They also have the advantage of EMH11 / UMH11N IMH11A completely eliminating parasitic effects. OUT IN GND OUT IN GND 5) Only the on/off conditions need to be set for (6) (5) (4) (4) (5) (6) operation, making the circuit design easy. 6) Lead Free/RoHS Compliant. Application (1) (2) (3) (3) (2) (1) GND IN OUT GND IN OUT Inverter circuit, Interface circuit, Driver circuit Packaging specifications Package Basic Taping Reel size Tape width Part No. Package size ordering Marking code (mm) (mm) (mm) unit (pcs) EMH11 EMT6 1616 T2R 180 8 8,000 H11 UMH11N UMT6 2021 TN 180 8 3,000 H11 IMH11A SMT6 2928 T110 180 8 3,000 H11 www.rohm.com 2014 ROHM Co., Ltd. All rights reserved. 2014.09 - Rev.C 1/7Data Sheet EMH11 / UMH11N / IMH11A Absolute maximum ratings (Ta = 25C) <For Tr1 and Tr2 in common> Parameter Symbol Values Unit V 50 V Supply voltage CC V 10 to 40 V Input voltage IN I Output current 50 mA O *1 Collector current I 100 mA C(MAX.) *3 Power dissipation EMH11 / UMH11N mW 150 (Total) *2 P D *4 IMH11A mW 300 (Total) T 150 C Junction temperature j T C Range of storage temperature 55 to 150 stg Electrical characteristics(Ta = 25C) <For Tr1 and Tr2 in common> Parameter Symbol Conditions Min. Typ. Max. Unit V V = 5V, I = 100A -- 0.5 I(off) CC O Input voltage V V V = 0.3V, I = 10mA 3.0 - - O O I(on) V I / I = 10mA / 0.5mA Output voltage - 0.1 0.3 V O(on) O I I V = 5V Input current - - 0.88 mA I I V = 50V, V = 0V Output current I - - 0.5 CC I A O(off) V = 5V, I = 5mA DC current gain G 30 --- O O I R Input resistance - 710 13 k 1 R /R - Resistance ratio 0.8 1 1.2 - 2 1 V = 10V, I = 5mA, *1 CE E Transition frequency f - 250 - MHz T f = 100MHz *1 Characteristics of built-in transistor *2 Each terminal mounted on a reference footprint *3 120mW per element must not be exceeded. *4 200mW per element must not be exceeded. www.rohm.com 2014 ROHM Co., Ltd. All rights reserved. 2014.09 - Rev.C 2/7