X-On Electronics has gained recognition as a prominent supplier of UMH14NTR Bipolar Transistors - Pre-Biased across the USA, India, Europe, Australia, and various other global locations. UMH14NTR Bipolar Transistors - Pre-Biased are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - Pre-Biased, ensuring timely deliveries around the world.

UMH14NTR ROHM

UMH14NTR electronic component of ROHM
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See Product Specifications
Part No.UMH14NTR
Manufacturer: ROHM
Category: Bipolar Transistors - Pre-Biased
Description: Bipolar Transistors - Pre-Biased DUAL NPN 50V 100MA
Datasheet: UMH14NTR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
557: USD 0.0729 ea
Line Total: USD 40.61 
Availability - 2910
Ship by Mon. 11 Nov to Fri. 15 Nov
MOQ: 557  Multiples: 1
Pack Size: 1

 UMH14NTR More Buying Options & Price Grid(s)

Availability Price Quantity
2910
Ship by Mon. 11 Nov to Fri. 15 Nov
MOQ : 557
Multiples : 1
557 : USD 0.0729
1000 : USD 0.0658
2000 : USD 0.0634
3000 : USD 0.0604

5820
Ship by Mon. 11 Nov to Fri. 15 Nov
MOQ : 1064
Multiples : 1
1064 : USD 0.0893
2500 : USD 0.0867
5000 : USD 0.0844

Specifications

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Transistor Polarity
Mounting Style
Package / Case
DC Collector/Base Gain hFE Min
Collector- Emitter Voltage VCEO Max
Peak DC Collector Current
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Factory Pack Quantity :
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the UMH14NTR from our Bipolar Transistors - Pre-Biased category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the UMH14NTR and other electronic components in the Bipolar Transistors - Pre-Biased category and beyond.

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Additional Infomation About Product

UMH14N / IMH14A Datasheet General purpose (dual digital transistor) llOutline Parameter DTr1 and DTr2 SOT-363 SOT-457 V 50V CEO I 100mA C R 47k 1 UMH14N IMH14A (UMT6) (SMT6) llFeatures llInner circuit 1)Two DTC144T chips in a UMT or SMT UMH14N package. 2)Mounting possible with UMT3 or SMT3 automatic mounting machines. 3)Transistor elements are independent, eliminating interference. 4)Mounting cost and area can be cut in half. IMH14A llApplication INVERTER, INTERFACE, DRIVER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-363 UMH14N 2021 TR 180 8 3000 H14 (UMT6) SOT-457 IMH14A 2928 T108 180 8 3000 H14 (SMT6) www.rohm.com 1/5 20151008 - Rev.002 2015 ROHM Co., Ltd. All rights reserved. Not Recommended for New DesignsUMH14N / IMH14A Datasheet llAbsolute maximum ratings (T = 25C) a <For DTr1 and DTr2 in common> Parameter Symbol Values Unit V Collector-base voltage 50 V CBO V Collector-emitter voltage 50 V CEO V Emitter-base voltage 5 V EBO I Collector current 100 mA C *1*2 P UMH14N 150 D Power dissipation mW/Total *1*3 P IMH14A 300 D T Junction temperature 150 j Range of storage temperature T -55 to +150 stg llElectrical characteristics (T = 25C) a <For DTr1 and DTr2 in common> Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = 50A 50 - - V CBO C voltage Collector-emitter breakdown BV I = 1mA 50 - - V CEO C voltage BV Emitter-base breakdown voltage I = 50A 5 - - V EBO E I V = 50V Collector cut-off current - - 500 nA CBO CB I V = 4V Emitter cut-off current - - 500 nA EBO EB Collector-emitter saturation voltage V I = 10mA, I = 1mA - - 300 mV CE(sat) C B h V = 5V, I = 1mA DC current gain 100 250 600 - FE CE C R Input resistance - 32.9 47 61.1 k 1 V = 10V, I = -5mA, CE E *4 f Transition frequency - 250 - MHz T f = 100MHz *1 Each terminal mounted on a reference land. *2 120mW per element must not be exceeded. *3 200mW per element must not be exceeded. *4 Characteristics of built-in transistor. www.rohm.com 2/5 2015 ROHM Co., Ltd. All rights reserved. 20151008 - Rev.002 Not Recommended for New Designs

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

LAPIS Semiconductor may also be referenced as

RHE
RHM
ROHM Semicon
ROHM Semiconductor

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