UMH1NFHATN ROHM

UMH1N FHA General purpose (Dual digital transistors) Datasheet AEC-Q101 Qualified llOutline Parameter DTr1 and DTr2 SOT-363 V 50V CC SC-88 I 100mA C(MAX.) R 22k 1 R UMT6 22k 2 llFeatures llInner circuit 1)Two DTC124E chips in a UMT6 package. 2)Mounting possible with UMT3 automatic mounting machines. 3)Transistor elements are independent, eliminating interference. 4)Mounting cost and area can be cut in half. llApplication INVERTER, INTERFACE, DRIVER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-363 UMH1N FHA 2021 TN 180 8 3000 H1 (UMT6) www.rohm.com 1/5 20161012 - Rev.001 2016 ROHM Co., Ltd. All rights reserved. UMH1N FHA Datasheet llAbsolute maximum ratings (T = 25C) a <For DTr1 and DTr2 in common> Parameter Symbol Values Unit V Supply voltage 50 V CC Input voltage V -10 to 40 V IN Output current I 30 mA O *1 I Collector current 100 mA C(MAX) *2*3 P Power dissipation 150 mW/TOTAL D T Junction temperature 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a <For DTr1 and DTr2 in common> Values Parameter Symbol Conditions Unit Min. Typ. Max. V V = 5V, I = 100A - - 0.5 I(off) CC O Input voltage V V V = 0.2V, I = 5mA 3 - - I(on) O O V Output voltage I = 10mA, I = 0.5mA - 100 300 mV O(on) O I I Input current V = 5V - - 360 A I I I Output current V = 50V, V = 0V - - 500 nA O(off) CC I DC current gain G V = 5V, I = 5mA 56 - - - I O O Input resistance R - 15.4 22 28.6 k 1 Resistance ratio R /R - 0.8 1.0 1.2 - 2 1 V = 10V, I = -5mA, CE E *1 f Transition frequency - 250 - MHz T f = 100MHz *1 Characteristics of built-in transistor *2 Each terminal mounted on a reference land *3 120mW per element must not be exceeded. www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 2/5 20161012 - Rev.001