EMH1 / UMH1N / IMH1A Datasheet NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors) Outline EMT6 UMT6 Parameter Tr1 and Tr2 (6) (6) (5) (5) V 50V CC (4) (4) (1) (1) I 100mA (2) (2) C(MAX.) (3) (3) R 22k 1 EMH1 UMH1N R 22k (SC-107C) SOT-363 (SC-88) 2 SMT6 (4) (5) Features (6) 1) Built-In Biasing Resistors, R = R = 22k . 1 2 (3) (2) 2) Two DTC124E chips in one package. (1) 3) Built-in bias resistors enable the configuration of IMH1A SOT-457 (SC-74) an inverter circuit without connecting external input resistors (see inner circuit). 4) The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing Inner circuit of the input. They also have the advantage of EMH1 / UMH1N IMH1A completely eliminating parasitic effects. OUT IN GND OUT IN GND 5) Only the on/off conditions need to be set for (6) (5) (4) (4) (5) (6) operation, making the circuit design easy. 6) Lead Free/RoHS Compliant. Application (1) (2) (3) (3) (2) (1) GND IN OUT GND IN OUT Inverter circuit, Interface circuit, Driver circuit Packaging specifications Package Basic Taping Reel size Tape width Part No. Package size ordering Marking code (mm) (mm) (mm) unit (pcs) EMH1 EMT6 1616 T2R 180 8 8,000 H1 UMH1N UMT6 2021 TN 180 8 3,000 H1 IMH1A SMT6 2928 T110 180 8 3,000 H1 www.rohm.com 2014 ROHM Co., Ltd. All rights reserved. 2014.10 - Rev.C 1/7Data Sheet EMH1 / UMH1N / IMH1A Absolute maximum ratings (Ta = 25C) <For Tr1 and Tr2 in common> Parameter Symbol Values Unit V 50 V Supply voltage CC V 10 to 40 V Input voltage IN I Output current 30 mA O *1 Collector current I 100 mA C(MAX.) *3 Power dissipation EMH1 / UMH1N mW 150 (Total) *2 P D *4 IMH1A mW 300 (Total) T 150 C Junction temperature j T C Range of storage temperature 55 to 150 stg Electrical characteristics(Ta = 25C) <For Tr1 and Tr2 in common> Parameter Symbol Conditions Min. Typ. Max. Unit V V = 5V, I = 100A -- 0.5 I(off) CC O Input voltage V V V = 0.2V, I = 5mA 3.0 - - O O I(on) V I / I = 10mA / 0.5mA Output voltage - 0.1 0.3 V O(on) O I I V = 5V Input current - - 0.36 mA I I V = 50V, V = 0V Output current I - - 0.5 CC I A O(off) V = 5V, I = 5mA DC current gain G 56 --- O O I R Input resistance - 15.4 22 28.6 k 1 R /R - Resistance ratio 0.8 1 1.2 - 2 1 V = 10V, I = 5mA, *1 CE E Transition frequency f - 250 - MHz T f = 100MHz *1 Characteristics of built-in transistor *2 Each terminal mounted on a reference footprint *3 120mW per element must not be exceeded. *4 200mW per element must not be exceeded. www.rohm.com 2014 ROHM Co., Ltd. All rights reserved. 2014.10 - Rev.C 2/7