EMH3 / UMH3N / IMH3A Datasheet NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors) Outline EMT6 UMT6 Parameter Tr1 and Tr2 (6) (6) (5) (5) V 50V CEO (4) (4) (1) (1) I 100mA (2) (2) C(MAX.) (3) (3) R 4.7k 1 EMH3 UMH3N (SC-107C) SOT-363 (SC-88) SMT6 (4) (5) Features (6) 1) Built-In Biasing Resistors. (3) (2) 2) Two DTC143T chips in one package. (1) 3) Built-in bias resistors enable the configuration of IMH3A SOT-457 (SC-74) an inverter circuit without connecting external input resistors (see inner circuit). 4) The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing Inner circuit of the input. They also have the advantage of IMH3A EMH3 / UMH3N completely eliminating parasitic effects. Collector Base Emitter Collector Base Emitter (6) (5) (4) (4) (5) (6) 5) Only the on/off conditions need to be set for operation, making the circuit design easy. 6) Lead Free/RoHS Compliant. Application (1) (2) (3) (3) (2) (1) Emitter Base Collector Emitter Base Collector Inverter circuit, Interface circuit, Driver circuit Packaging specifications Package Basic Taping Reel size Tape width Part No. Package size ordering Marking code (mm) (mm) (mm) unit (pcs) EMH3 EMT6 1616 T2R 180 8 8,000 H3 UMH3N UMT6 2021 TN 180 8 3,000 H3 IMH3A SMT6 2928 T110 180 8 3,000 H3 www.rohm.com 2014 ROHM Co., Ltd. All rights reserved. 2014.10 - Rev.C 1/6Data Sheet EMH3 / UMH3N / IMH3A Absolute maximum ratings (Ta = 25C) <For Tr1 and Tr2 in common> Parameter Symbol Values Unit V 50 V Collector-base voltage CBO V 50 V Collector-emitter voltage CEO V Emitter-base voltage 5V EBO *1 Collector current I 100 mA C(MAX.) *3 Collector Power dissipation EMH3 / UMH3N mW 150 (Total) *2 P D *4 IMH3A mW 300 (Total) T 150 C Junction temperature j T C Range of storage temperature 55 to 150 stg Electrical characteristics(Ta = 25C) <For Tr1 and Tr2 in common> Parameter Symbol Conditions Min. Typ. Max. Unit Collector-base breakdown voltage BV I = 50A 50 - - V CBO C BV I = 1mA Collector-emitter breakdown voltage 50 - - V C CEO BV I = 50A Emitter-base breakdown voltage 5- - V EBO E I V = 50V Collector cut-off current - - 0.5 A CBO CB V = 4V Emitter cut-off current I - - 0.5 EB A EBO I / I = 5mA / 0.25mA Collector-emitter saturation voltage V - - 0.15 V C B CE(sat) h V = 5V , I = 1mA , DC current gain 100 250 600 - CE C FE R - Input resistance 3.5 4.7 5.9 k 1 V = 10V, I = 5mA, *1 CE E Transition frequency f - 250 - MHz T f = 100MHz *1 Characteristics of built-in transistor *2 Each terminal mounted on a reference footprint *3 120mW per element must not be exceeded. *4 200mW per element must not be exceeded. www.rohm.com 2014 ROHM Co., Ltd. All rights reserved. 2014.10 - Rev.C 2/6