EMH4 / UMH4N / IMH4A Datasheet NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors) Outline EMT6 UMT6 Parameter Tr1 and Tr2 (6) (6) (5) (5) V 50V (4) CEO (4) (1) (1) (2) (2) I 100mA C(MAX.) (3) (3) R 10k 1 EMH4 UMH4N (SC-107C) SOT-363 (SC-88) SMT6 (4) (5) Features (6) (3) 1) Built-In Biasing Resistors. (2) (1) 2) Two DTC114T chips in one package. 3) Built-in bias resistors enable the configuration of IMH4A SOT-457 (SC-74) an inverter circuit without connecting external input resistors (see inner circuit). 4) The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing Inner circuit of the input. They also have the advantage of IMH4A EMH4 / UMH4N completely eliminating parasitic effects. Collector Base Emitter Collector Base Emitter 5) Only the on/off conditions need to be set for (6) (5) (4) (4) (5) (6) operation, making the circuit design easy. 6) Lead Free/RoHS Compliant. Application (1) (2) (3) (3) (2) (1) Inverter circuit, Interface circuit, Driver circuit Emitter Base Collector Emitter Base Collector Packaging specifications Package Basic Taping Reel size Tape width Part No. Package size ordering Marking code (mm) (mm) (mm) unit (pcs) EMH4 EMT6 1616 T2R 180 8 8,000 H4 UMH4N UMT6 2021 TN 180 8 3,000 H4 IMH4A SMT6 2928 T110 180 8 3,000 H4 www.rohm.com 2014 ROHM Co., Ltd. All rights reserved. 2014.10 - Rev.C 1/6Data Sheet EMH4 / UMH4N / IMH4A Absolute maximum ratings (Ta = 25C) <For Tr1 and Tr2 in common> Parameter Symbol Values Unit V 50 V Collector-base voltage CBO V 50 V Collector-emitter voltage CEO V Emitter-base voltage 5V EBO *1 Collector current I 100 mA C(MAX.) *3 Collector Power dissipation EMH4 / UMH4N mW 150 (Total) *2 P D *4 IMH4A mW 300 (Total) T 150 C Junction temperature j T C Range of storage temperature 55 to 150 stg Electrical characteristics(Ta = 25C) <For Tr1 and Tr2 in common> Parameter Symbol Conditions Min. Typ. Max. Unit Collector-base breakdown voltage BV I = 50A 50 - - V CBO C BV I = 1mA Collector-emitter breakdown voltage 50 - - V C CEO BV I = 50A Emitter-base breakdown voltage 5- - V EBO E I V = 50V Collector cut-off current - - 0.5 A CBO CB V = 4V Emitter cut-off current I - - 0.5 EB A EBO I / I = 10mA / 1mA Collector-emitter saturation voltage V - - 0.3 V C B CE(sat) h V = 5V , I = 1mA , DC current gain 100 250 600 - CE C FE R - Input resistance 710 13 k 1 V = 10V, I = 5mA, *1 CE E Transition frequency f - 250 - MHz T f = 100MHz *1 Characteristics of built-in transistor *2 Each terminal mounted on a reference footprint *3 120mW per element must not be exceeded. *4 200mW per element must not be exceeded. www.rohm.com 2014 ROHM Co., Ltd. All rights reserved. 2014.10 - Rev.C 2/6