X-On Electronics has gained recognition as a prominent supplier of RU6888M MOSFETs across the USA, India, Europe, Australia, and various other global locations. RU6888M MOSFETs are a product manufactured by Ruichips. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RU6888M Ruichips

Name: RU6888M
Brand: Ruichips
SKU: RU6888M_Ruichips
Availability: InStock
Rating: 5 (11 reviews)

RU6888M electronic component of Ruichips

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See Product Specifications

Part No.	RU6888M
Manufacturer:	Ruichips
Category:	MOSFETs
Description:	MOSFET N Trench 60V 62A (Tc) 4V @ 250uA 8 mÎ© @ 40A,10V PDFN5060 RoHS
Datasheet:	RU6888M Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 0.7017 ea
Line Total: USD 0.7

Availability - 7
Ship by Fri. 10 Jan to Wed. 15 Jan

MOQ: 1 Multiples: 1
Pack Size: 1

RU6888M More Buying Options & Price Grid(s)

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Availability Price Buy Price Quantity

7

Ship by Fri. 10 Jan to Wed. 15 Jan

MOQ : 1
Multiples : 1

1 : USD 0.7017
10 : USD 0.6024
30 : USD 0.5583
100 : USD 0.5048
500 : USD 0.2793
1000 : USD 0.2639

Specifications

Manufacturer

Ruichips Ruichips

Product Category

MOSFETs MOSFETs

Category

MOSFET MOSFET

Rohs

y y

Package

PDFN5060 PDFN5060

Brand Category

Ruichips Ruichips

Fet Type

n trench n trench

Drain To Source Voltagevdss

60 V 60 V

Continuous Drain Current Id @ 25°C

62 A (t C) 62 A (t C)

Vgsth Max @ Id

4v @ 250ua 4v @ 250ua

Rds On Max @ Id Vgs

8 m @ 40a,10v 8 m @ 40a,10v

Power Dissipation-Max Ta

62.5 W 62.5 W

Drain Source Voltage Vdss

60 V 60 V

Continuous Drain Current Id

62 A 62 A

Power Dissipation Pd

62.5 W 62.5 W

Drain Source On Resistance Rdson@Vgs Id

8 mOhms @10V , 40A 8 mOhms @10V , 40A

Gate Threshold Voltage Vgsth@Id

4 V @250uA 4 V @250uA

Type

N Channel N Channel

Notes:- Show Stocked Products With Similar Attributes.

RU6888M Alternative Parts

We are delighted to provide the RU6888M from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RU6888M and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The RU6888M is an N-channel Trench Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) manufactured by Ruichips. This transistor is designed to handle a maximum current of 62 Amps, with a breakdown voltage of 60 Volts and a total gate charge of 8 mOhms at 40 Amps. It also has a threshold voltage of 4 Volts and a maximum drain-source on-state resistance of 250uA at 10 Volts. Additionally, the RU6888M is ROHS compliant.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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Availability	Price	Buy Price	Quantity
7 Ship by Fri. 10 Jan to Wed. 15 Jan MOQ : 1 Multiples : 1	1 : USD 0.7017 10 : USD 0.6024 30 : USD 0.5583 100 : USD 0.5048 500 : USD 0.2793 1000 : USD 0.2639

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