Ordering number : ENN6913 2SA2040/2SC5707 PNP / NPN Epitaxial Planar Silicon Transistors 2SA2040 / 2SC5707 High Current Switching Applications Applications Package Dimensions DC-DC converter, relay drivers, lamp drivers, unit : mm motor drivers, strobes. 2045B 2SA2040 / 2SC5707 Features 6.5 2.3 5.0 0.5 Adoption of FBET, MBIT process. 4 Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. High allowable power dissipation. 0.85 0.7 1.2 0.6 0.5 1 : Base 1 23 2 : Collector 3 : Emitter 4 : Collector SANYO : TP 2.3 2.3 Package Dimensions unit : mm 2044B 2SA2040 / 2SC5707 6.5 2.3 5.0 0.5 4 0.85 0.5 12 3 1 : Base 0.6 1.2 2 : Collector 0 to 0.2 3 : Emitter 4 : Collector 2.3 2.3 SANYO : TP-FA Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 30101 TS IM TA-3233 No.6913-1/5 0.8 5.5 1.5 0.8 5.5 1.5 2.5 7.0 1.6 7.5 7.0 1.22SA2040/2SC5707 Specifications Note*( ) : 2SA2040 Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage V (--50)80 V CBO Collector-to-Emitter Voltage V (--50)80 V CES Collector-to-Emitter Voltage V (--)50 V CEO Emitter-to-Base Voltage V (--)6 V EBO Collector Current I (--)8 A C Collector Current (Pulse) I (--)11 A CP Base Current I (--)2 A B 1.0 W Collector Dissipation P C Tc=25C15W Junction Temperature Tj 150 C Storage Temperature Tstg - 55 to +150 C Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current I V =(--)40V, I =0 (--)0.1 A CBO CB E Emitter Cutoff Current I V =(--)4V, I =0 (--)0.1 A EBO EB C DC Current Gain h V =(--)2V, I =(--)500mA 200 560 FE CE C Gain-Bandwidth Product f V =(--)10V, I =(--)500mA (290)330 MHz T CE C Output Capacitance Cob V =(--)10V, f=1MHz (50)28 pF CB I =(--)3.5A, I =(--)175mA (--230)160 (--390)240 mV C B Collector-to-Emitter Saturation Voltage V (sat) CE I =(--)2A, I =(--)40mA (--240)110 (--400)170 mV C B Base-to-Emitter Saturation Voltage V (sat) IC=(--)2A, IB=(--)40mA (--)0.83 (--)1.2 V BE Collector-to-Base Breakdown Voltage V I =(--)10A, I =0 (--50)80 V (BR)CBO C E Collector-to-Emitter Breakdown Voltage V I =(--)100A, R = 80 V (BR)CES C BE Collector-to-Emitter Breakdown Voltage V I =(--)1mA, R = (--)50 V (BR)CEO C BE Emitter-to-Base Breakdown Voltage V I =(--)10A, I =0 (--)6 V (BR)EBO E C Turn-On Time t See specified test circuit. (40)30 ns on Storage Time t See specified test circuit. (225)420 ns stg Fall Time t See specified test circuit. 25 ns f Swicthing Time Test Circuit I PW=20s B1 D.C.1% I B2 OUTPUT INPUT R B R V L R + + 50 100F 470F V = --5V V =25V BE CC 20I = --20I = I =2.5A B1 B2 C For PNP, the polarity is reversed. No.6913-2/5