www.DataSheet.co.kr Ordering number : ENA1045 VEC2905 SANYO Semiconductors DATA SHEET PNP Epitaxial Planar Silicon Transistor P-Channel Silicon MOSFET VEC2905 General-Purpose Switching Device Applications Features Composite type, facilitatiing high-density mounting. Mounting height 0.75mm. Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit TR Collector-to-Base Voltage V --30 V CBO Collector-to-Emitter Voltage V --30 V CEO Emitter-to-Collector Voltage V --6.5 V ECO Emitter-to-Base Voltage V --5 V EBO Collector Current I --3 A C Collector Current (Pulse) I --5 A CP Base Current I --600 mA B 2 Collector Dissipation P When mounted on ceramic substrate (900mm0.8mm) 1unit 1.1 W C Junction Temperature Tj 150 C Storage Temperature Tstg --55 to +150 C FET Drain-to-Source Voltage V --20 V DSS Gate-to-Source Voltage V 10 V GSS Drain Current (DC) I --3 A D Drain Current (Pulse) I PW 10 s, duty cycle 1% --12 A DP 2 Allowable Power Dissipation P When mounted on ceramic substrate (900mm0.8mm) 1unit 1.1 W D Channel Temperature Tch 150 C Storage Temperature Tstg --55 to +150 C Marking : AJ Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to standard applicatio, intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for anyspecial applicatio (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer s products or equipment. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 20608PE TI IM TC-00001176 No. A1045-1/6 Datasheet pdf - www.DataSheet.co.kr VEC2905 Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max TR Collector Cutoff Current I V =--30V, I =0A --0.1 A CBO CB E Emitter Cutoff Current I V =--4V, I =0A --0.1 A EBO EB C DC Current Gain h V =--2V, I =--500mA 200 560 FE CE C Gain-Bandwidth Product f V =--10V, I =--500mA 380 MHz T CE C Output Capacitance Cob V =--10V, f=1MHz 25 pF CB V (sat)1 I =--1.5A, I =--30mA --160 --235 mV CE C B Collector-to-Emitter Saturation Voltage V (sat)2 I =--1.5A, I =--75mA --110 --160 mV CE C B Base-to-Emitter Saturation Voltage V (sat) I =--1.5A, I =--30mA --0.83 --1.2 V BE C B Collector-to-Base Breakdown Voltage V I =--10 A, I =0A --30 V (BR)CBO C E Collector-to-Emitter Breakdown Voltage V I =--1mA, R = --30 V (BR)CEO C BE Emitter-to-Collector Breakdown Voltage V I =--10 A, R = --6.5 V (BR)ECO C CB Emitter-to-Base Breakdown Voltage V I =--10 A, I =0A --5 V (BR)EBO E C Turn-ON Time t See specified Test Circuit. 50 ns on Storage Time t See specified Test Circuit. 270 ns stg Fall Time t See specified Test Circuit. 25 ns f FET Drain-to-Source Breakdown Voltage V I =--1mA, V =0V --20 V (BR)DSS D GS Zero-Gate Voltage Drain Current I V =--20V, V =0V --1 A DSS DS GS Gate-to-Source Leakage Current I V =8V, V =0V 10 A GSS GS DS Cutoff Voltage V (off) V =--10V, I =--1mA --0.4 --1.3 V GS DS D Forward Transfer Admittance yfs V =--10V, I =--1.5A 2.9 4.9 S DS D R (on)1 I =--2A, V =--4.5V 62 81 m DS D GS Static Drain-to-Source On-State Resistance R (on)2 I =--1A, V =--2.5V 87 120 m DS D GS R (on)3 I =--0.3A, V =--1.8V 130 210 m DS D GS Input Capacitance Ciss V =--10V, f=1MHz 680 pF DS Output Capacitance Coss V =--10V, f=1MHz 115 pF DS Reverse Transfer Capacitance Crss V =--10V, f=1MHz 80 pF DS Turn-ON Delay Time t (on) See specified Test Circuit. 13 ns d Rise Time t See specified Test Circuit. 53 ns r Turn-OFF Delay Time t (off) See specified Test Circuit. 77 ns d Fall Time t See specified Test Circuit. 62 ns f Total Gate Charge Qg V =--10V, V =--4.5V, I =--3A 8.2 nC DS GS D Gate-to-Source Charge Qgs V =--10V, V =--4.5V, I =--3A 1.7 nC DS GS D Gate-to-Drain Miller Charge Qgd V =--10V, V =--4.5V, I =--3A 2.1 nC DS GS D Diode Forward Voltage V I =--3A, V =0V --0.88 --1.2 V SD S GS Note : The specifications shown above are for each individual transistor. Package Dimensions Electrical Connection unit : mm (typ) 7012-010 876 5 1 : Emitter 2 : Base 0.3 0.15 3 : Drain 87 6 5 4 : Drain 5 : Source 6 : Gate 7 : Collector 8 : Collector 123 4 123 4 0.65 Top view 2.9 1 : Emitter 2 : Base 3 : Drain 4 : Drain 5 : Source 6 : Gate 7 : Collector 8 : Collector SANYO : VEC8 No. A1045-2/6 Datasheet pdf -