2N6193
Silicon PNP Transistor
Data Sheet
Description Applications
General purpose switching transistor
Low power
Semicoa Semiconductors offers:
PNP silicon transistor
Screening and processing per MIL-PRF-19500 Appendix E
JAN level (2N6193J)
JANTX level (2N6193JX)
JANTXV level (2N6193JV)
QCI to the applicable level
100% die visual inspection per MIL-STD-750 method
2072 for JANTXV
Radiation testing (total dose) upon request
Features
Hermetically sealed TO-39 metal can
Also available in chip configuration
Chip geometry 9700
Reference document:
MIL-PRF-19500/561
Benefits
Qualification Levels: JAN, JANTX, and
Please contact Semicoa for special configurations
JANTXV
www.SEMICOA.com or (714) 979-1900
Radiation testing available
Absolute Maximum Ratings T = 25C unless otherwise specified
C
Parameter Symbol Rating Unit
Volts
Collector-Emitter Voltage V 100
CEO
Volts
Collector-Base Voltage V 100
CBO
Volts
Emitter-Base Voltage V 6
EBO
A
Collector Current, Continuous I 5
C
Power Dissipation, T = 25C 1 W
A
P
T
5.71 mW/C
Derate linearly above 25C
C/W
Thermal Resistance 17.5
R
JC
Operating Junction Temperature T
J
C
-65 to +200
Storage Temperature T
STG
Semicoa Semiconductors, Inc.
Copyright 2002
Rev. D 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 1 of 2
www.SEMICOA.com
2N6193
Silicon PNP Transistor
Data Sheet
ELECTRICAL CHARACTERISTICS
characteristics specified at T = 25C
A
Off Characteristics
Parameter Symbol Test Conditions Min Typ Max Units
Volts
Collector-Emitter Breakdown Voltage V I = 50 mA 100
(BR)CEO C
A
Collector-Base Cutoff Current I V = 100 Volts 10
CBO1 CB
A
Collector-Emitter Cutoff Current I V = 100 Volts 100
CEO CE
I V = 90Volts, V = 1.5Volts 10
A
CEX1 CE BE
Collector-Emitter Cutoff Current I V =90Volts, V = 1.5Volts, 1 mA
CEX2 CE BE
T = 150C
A
A
Emitter-Base Cutoff Current I V = 6 Volts 100
EBO1 EB
Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%
On Characteristics
Parameter Symbol Test Conditions Min Typ Max Units
h I = 0.5 A, V = 2 Volts 60
FE1 C CE
h I = 2 A, V = 2 Volts 60 240
FE2 C CE
DC Current Gain h I = 5 A, V = 2 Volts 40
FE3 C CE
h I = 2 A, V = 2 Volts 12
FE4 C CE
T = -55C
A
V I = 2 A, I = 200 mA 1.2
BEsat1 C B
Volts
Base-Emitter Saturation Voltage
V I = 5 A, I = 500 mA 1.8
BEsat2 C B
V I = 2 A, I = 200 mA 0.7
CEsat1 C B
Volts
Collector-Emitter Saturation Voltage
V I = 5 A, I = 500 mA 1.2
CEsat2 C B
Dynamic Characteristics
Parameter Symbol Test Conditions Min Typ Max Units
Magnitude Common Emitter, Short V = 10 Volts, I = 500 mA,
CE C
|h | 3 15
FE
Circuit Forward Current Transfer Ratio f = 10 MHz
V = 10 Volts, I = 0 mA,
CB E
pF
Open Circuit Output Capacitance C 300
OBO
100 kHZ < f < 1 MHz
V = 2 Volts, I = 0 mA,
EB C
pF
Open Circuit Input Capacitance C 1,250
IBO
100 kHZ < f < 1 MHz
Switching Characteristics
Delay Time t 100
d
I = 2 A, I = 200 mA ns
C B1
Rise Time t 100
r
Storage Time t 2
s
s
I = 2 mA, I =I = 200 mA
C B1 B2
Fall Time t 200 ns
f
Semicoa Semiconductors, Inc.
Copyright 2002
Rev. D 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 2 of 2
www.SEMICOA.com