INCH-POUND The documentation and process conversion measures necessary to comply with this revision MIL-PRF-19500/366R shall be completed by 15 August 2015. 15 May 2015 SUPERSEDING MIL-PRF-19500/366P 23 October 2012 PERFORMANCE SPECIFICATION SHEET * TRANSISTOR, NPN, RADIATION HARDENED, SILICON, AMPLIFIER, TYPES 2N3498, 2N3499, 2N3500, 2N3501, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC Device types 2N3498, 2N3499, 2N3500 and their corresponding L suffix versions are inactive for new design after 14 April 1995. This specification is approved for use by all Departments and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE * 1.1 Scope. This specification covers the performance requirements for NPN, silicon, radiation hardened, low- power amplifier and switching transistors. Four levels of product assurance are provided for each encapsulated device (JAN, JANTX, JANTXV, and JANS). Two levels of product assurance are provided for unencapsulated die (JANHC and JANKC). * 1.2 Package outlines and die topography. The device package for the encapsulated device type are as follows: TO-5 and TO-39 in accordance with figure 1, surface mount version in accordance with figure 2 (2N3501UB only) and figure 3 (U4 suffix versions). The dimensions and topography for JANHC and JANKC unencapsulated die are as follows: B version die in accordance with figure 4, and C version die in accordance with figure 5. 1.3 Maximum ratings. Unless otherwise specified T = +25C. A Types V V R R R P P P V I T and CEO EBO JA JC JSP T T T CBO C J T T = T = T = STG A C SP +25 C (1) +25 C (1) +25 C (1) W W W V dc V dc V dc mA dc C /W C /W C /W C 2N3498, L 1 5 N/A 175 30 N/A 100 100 6 500 -65 to 2N3498U4 1 4 N/A 100 100 6 500 175 15 N/A +200 2N3499, L 1 5 N/A 100 100 6 500 175 30 N/A 2N3499U4 1 4 N/A 100 100 6 500 175 15 N/A 2N3500, L 1 5 N/A 175 30 N/A 150 150 6 300 2N3500U4 1 4 N/A 175 15 N/A 150 150 6 300 2N3501, L 1 5 N/A 150 150 6 300 175 30 N/A 2N3501U4 1 4 N/A 150 150 6 300 175 15 N/A 2N3501UB .5 N/A 1.5 150 150 6 300 325 N/A 90 (1) See derating curve figures 6, 7, 8, 9, and 10. Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime, ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductor dla.mil. Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at MIL-PRF-19500/366R 1.4 Primary electrical characteristics. Unless otherwise specified, T = +25C. A h h at V = 10 V dc C fe FE CE obo Type V = 20 V dc CE V = 10 V dc CB I = 20 mA dc I = 0 E C h h h h (1) (1) f = 100 MHz 100 kHz f FE1 (1) (1) FE6 FE4 FE5 I = 0.1 mA dc I = 500 mA dc 1 MHz I = 300 mA dc C I = 150 mA dc C C C pF pF Min Max Min Max Min Max Min Max Min Max Min Max 2N3498, L 20 40 120 15 1.5 8.0 10 2N3498U4 20 40 120 15 1.5 8.0 10 2N3499, L 35 100 300 20 1.5 8.0 10 2N3499U4 35 100 300 20 1.5 8.0 10 2N3500, L 20 40 120 15 1.5 8.0 8 2N3500U4 20 40 120 15 1.5 8.0 8 2N3501, L 35 100 300 20 1.5 8.0 8 2N3501U4 35 100 300 20 1.5 8.0 8 2N3501UB 35 100 300 20 1.5 8.0 8 (1) Pulsed (see 4.5.1). V t (1) V t CE(sat) on (1) BE(sat) off Types I = 10 mA dc I = 300 mA dc I = 10 mA dc I = 300 mA dc I = 150 mA dc I = 150 mA dc C C C C C C (1) I = 15 mA dc I = -I = 15 mA dc I = 1 mA dc I = 30 mA dc I = 1 mA dc I = 30 mA dc B1 B1 B2 B B B B V = 5 V dc EB Min Max Min Max Min Max Min Max Max Max V dc V dc V dc V dc V dc V dc V dc V dc ns ns 2N3498 0.2 0.6 0.8 1.4 115 1,150 2N3498U4 0.2 0.6 0.8 1.4 115 1,150 2N3499 0.2 0.6 0.8 1.4 115 1,150 2N3499U4 0.2 0.6 0.8 1.4 115 1,150 2N3500 0.2 0.8 115 1,150 2N3500U4 0.2 0.8 115 1,150 2N3501 0.2 0.8 115 1,150 2N3501U4 0.2 0.8 115 1,150 2N3501UB 0.2 0.8 115 1,150 (1) Pulsed (see 4.5.1). 2