X-On Electronics has gained recognition as a prominent supplier of JANTX2N2946A Bipolar Transistors - Pre-Biased across the USA, India, Europe, Australia, and various other global locations. JANTX2N2946A Bipolar Transistors - Pre-Biased are a product manufactured by Semicoa. We provide cost-effective solutions for Bipolar Transistors - Pre-Biased, ensuring timely deliveries around the world.

JANTX2N2946A Semicoa

JANTX2N2946A electronic component of Semicoa
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Part No.JANTX2N2946A
Manufacturer: Semicoa
Category: Bipolar Transistors - Pre-Biased
Description: Trans GP BJT PNP 35V 0.1A 3-Pin TO-46
Datasheet: JANTX2N2946A Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 19.4825 ea
Line Total: USD 19.48 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 1
Multiples : 1
1 : USD 19.4825
10 : USD 15.1501
25 : USD 13.7848

   
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
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We are delighted to provide the JANTX2N2946A from our Bipolar Transistors - Pre-Biased category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the JANTX2N2946A and other electronic components in the Bipolar Transistors - Pre-Biased category and beyond.

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The documentation and process conversion measures necessary to comply with this document [INCH-POUND shall be completed by 5 September 2015. MIL-PRF-19500/382K 5 June 2015 SUPERSEDING MIL-PRF-19500/382J 18 April 2012 PERFORMANCE SPECIFICATION SHEET * TRANSISTOR, PNP, SILICON, LOW-POWER, ENCAPSULATED (THROUGH-HOLE AND SURFACE MOUNT), AND UNENCAPSULATED, RADIATION HARDNESS ASSUARANCE, DEVICE TYPES 2N2944A, 2N2945A, 2N2946A, QUALITY LEVELS: JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC This specification is approved for use by all Departments and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MILPRF19500. 1. SCOPE * 1.1 Scope. This specification covers the performance requirements for low-power, PNP, silicon 2N2944A, 2N2945A, 2N2946A transistors for use in high-speed, switching and general purpose amplifier applications. A M and UBM suffix will indicate a matched pair. Four levels of product assurance are provided for each encapsulated device type as specified in MILPRF19500, and two levels of product assurance are provided for each unencapsulated device type. Provisions for radiation hardness assurance (RHA) to eight radiation levels is provided for quality levels JANTX, JANS, JANHC, and JANKC. RHA level designators M, D, P, L, R, F, G, and H are appended to the device prefix to identify devices, which have passed RHA requirements. * 1.2 Package and die outlines. The device package for the encapsulated device type are as follows: TO-46 in accordance with figure 1 and surface mount in accordance with figure 2. The dimensions and topography for JANHC and JANKC unencapsulated die are in accordance with figure 3. 1.3 Maximum ratings, unless otherwise specified T = +25C. A P P V V V V I T and R R T T EBO CBO CEO ECO C J JA JSP Types T = +25C T = +25C T (3) (4) STG A SP (1) (2) (1) (2) mW mW V dc V dc V dc V dc mA dc C C/W C/W 2N2944A 400 N/A -15 -15 -10 -10 -100 -65 to 435 N/A 2N2945A, AM 400 N/A -25 -25 -20 -20 -100 +200 435 N/A 2N2946A 400 N/A -40 -40 -35 -35 -100 435 N/A 2N2944AUB 400 800 -15 -15 -10 -10 -100 -65 to 435 (5) 90 2N2945AUB 400 800 -25 -25 -20 -20 -100 +200 435 (5) 90 2N2945AUBM 400 800 -25 -25 -20 -20 -100 435 (5) 90 2N2946AUB 400 800 -40 -40 -35 -35 -100 435 (5) 90 (1) For derating, see figures 4 and 5. (2) See 3.3 for abbreviations. (3) For thermal curves, see figures 6 and 7. * Comments, suggestions, or questions on this document should be to DLA Land and Maritime, ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductor@dla.mil. Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at MIL-PRF-19500/382K 1.3 Maximum ratings, unless otherwise specified T = +25C. - Continued. A (4) For non-thermal conductive PCB or unknown PCB surface mount conditions in free air, substitute figure 6 for the UB package and use R . JA (5) T = +55C for UB on printed circuit board (PCB), PCB = FR4 .0625 inch (1.59 mm) 1 - layer 1 Oz Cu, horizontal, A still air, pads (UB) = .034 inch (0.86 mm) x .048 inch (1.22 mm), R with a defined thermal resistance condition JA included is measured at P = 400 mW. T 1.4 Primary electrical characteristics unless otherwise specified T = +25C. A Limits h h (inv) r (on) FE1 FE 1 ec 2 V = -0.5 V dc V = -0.5 V dc I = -1 mA dc CE EC B I = -1 mA dc I = -200 A dc I = 100 A ac(rms) C E e I = 0; f = 1 kHz E 2N2944A 2N2945 2N2946A 2N2944A 2N2945A 2N2946A 2N2944A 2N2945A A, AM, UB AUBM ohms ohms Min 100 70 70 50 50 30 20 Max 200 4 6 Limits r (on) V (ofs) ec 2 EC I = -1 mA dc B I = 100 A ac(rms) e I = 0; f = 1 kHz I = -200 A dc I = -1.0 mA dc E B b I = 0 I = 0 E E 2N2946A 2N2944A 2N2945A 2N2946A 2N2944A 2N2945A 2N2946A ohms mV dc mV dc mV dc mV dc mV dc mV dc Min Max 8 -0.3 -0.5 -0.8 -0.6 -1.0 -2.0 Limits h C C fe obo ibo V = -6 V dc V = -6 V dc CB EB f = 1 MHz I = 0 I = 0 E C V = -6 V dc 100 kHz f 1 MHz 100 kHz f 1 MHz CE I = -1 mA dc C 2N2945A 2N2944A 2N2945A 2N2946A pF pF Min 15 10 5 Max 55 55 55 10 6 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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