1. 2N3670 is a NPN bipolar junction transistor (BJT) manufactured by ON Semiconductor. It is designed for use in commercial and industrial applications, including radio-frequency (RF) amplifiers, switching circuits, general-purpose amplifier circuits, and any circuit requiring high gain and low noise.
2. This transistor has a maximum current rating of 600 mA, voltage rating of Collector-Emitter Voltage (VCEO) of 40 V, and Collector-Base Voltage (VCBO) of 40 V. It has high power dissipation (PD) of 700mW and a gain bandwidth product (fT) of 1MHz. It also has a good complement of features such as low noise, wide frequency response, and low distortion.