2N3669 2N3670 www.centralsemi.com SILICON CONTROLLED RECITIFIERS DESCRIPTION: 16 AMP, 400 THRU 600 VOLT The CENTRAL SEMICONDUCTOR 2N3669 and 2N3670 are hermetically sealed SCRs designed for sensing circuit applications and control systems. Higher voltage devices and electrical selections are available on special order. MARKING: FULL PART NUMBER TO-3 50 MIL CASE MAXIMUM RATINGS: (T =25C unless otherwise noted) C SYMBOL 2N3669 2N3670 UNITS Peak Repetitive Off-State Voltage V 200 400 V RRM Peak Repetitive Off-State Voltage V 400 600 V DRM RMS On-State Current (T=90C) I 16 A C T(RMS) Peak One Cycle Surge Current (60Hz, T=80C) I 200 A C TSM Peak Gate Current I 4.0 A GM Average Gate Power Dissipation P 0.5 W G(AV) Operating and Storage Junction Temperature T , T -40 to +125 C J stg Thermal Resistance 1.7 C/W JC ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) C SYMBOL TEST CONDITIONS MIN TYP MAX UNITS I V =Rated V , T=100C 1.0 mA RRM R RRM C I V =Rated V , T=100C 2.0 mA DRM D DRM C I V=7.0V 1.0 40 mA GT D I R=1.0K 0.5 50 mA H G V I=25A 1.8 V TM T V V=7.0V 2.0 V GT D dv/dt V =V , R =1.0k, T=100C 10 400 V/s D DRM G C t I =125mA, diG/dt=1.25A/s 500 ns gd G t V =V , V =35V, I =10A, T=90C 50 s q D DRM R T C R1 (3-October 2017)2N3669 2N3670 SILICON CONTROLLED RECITIFIERS 16 AMP, 400 THRU 600 VOLT TO-3 50 MIL CASE - MECHANICAL OUTLINE R0 LEAD CODE: 1) Gate 2) Cathode Case) Anode MARKING: FULL PART NUMBER R1 (3-October 2017) www.centralsemi.com