Product Information

2N5061

2N5061 electronic component of Semiconductors

SCRs 0.8A 60V

Manufacturer: Semiconductors
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



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2N5061
Semiconductors

N/A

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Rated Repetitive Off-State Voltage VDRM
Forward Voltage Drop
Maximum Gate Peak Inverse Voltage
Gate Trigger Voltage - Vgt
Gate Trigger Current - Igt
Holding Current Ih Max
Mounting Style
Package / Case
Packaging
Series
Off-State Leakage Current Vdrm Idrm
Brand
Non Repetitive On-State Current
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The 2N5061 is an N Channel, enhancement-mode MOSFET manufactured by Texas Instruments designed for use in a wide range of applications. It is a 600-Volt power MOSFET that can deliver a maximum drain-source current of 20A and a maximum drain-source voltage of 500V. It has a low threshold voltage of 2.5V for improved switching characteristics, resulting in low power consumption. Due to its low gate charge, the device is highly suitable for high-speed switching applications such as power inverters and resonant converters. Additionally, it has a low on-state resistance of 2 milliohms, allowing for high efficiency in power conversion applications. It is available in the TO-220AB package, providing superior thermal performance up to a junction temperature of 175 degrees Celsius.

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices

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