X-On Electronics has gained recognition as a prominent supplier of 2N5061 SCRs across the USA, India, Europe, Australia, and various other global locations. 2N5061 SCRs are a product manufactured by Semiconductors. We provide cost-effective solutions for SCRs, ensuring timely deliveries around the world.

2N5061 Semiconductors

2N5061 electronic component of Semiconductors
2N5061 Semiconductors
2N5061 SCRs
2N5061  Semiconductors

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See Product Specifications
Part No. 2N5061
Manufacturer: Semiconductors
Category: SCRs
Description: SCRs 0.8A 60V
Datasheet:
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
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Multiples : 1
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Manufacturer
Product Category
RoHS - XON
Icon ROHS
Rated Repetitive Off-State Voltage VDRM
Forward Voltage Drop
Maximum Gate Peak Inverse Voltage
Gate Trigger Voltage - Vgt
Gate Trigger Current - Igt
Holding Current Ih Max
Mounting Style
Package / Case
Packaging
Series
Off-State Leakage Current Vdrm Idrm
Brand
Non Repetitive On-State Current
Factory Pack Quantity :
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We are delighted to provide the 2N5061 from our SCRs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2N5061 and other electronic components in the SCRs category and beyond.

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The 2N5061 is an N Channel, enhancement-mode MOSFET manufactured by Texas Instruments designed for use in a wide range of applications. It is a 600-Volt power MOSFET that can deliver a maximum drain-source current of 20A and a maximum drain-source voltage of 500V. It has a low threshold voltage of 2.5V for improved switching characteristics, resulting in low power consumption. Due to its low gate charge, the device is highly suitable for high-speed switching applications such as power inverters and resonant converters. Additionally, it has a low on-state resistance of 2 milliohms, allowing for high efficiency in power conversion applications. It is available in the TO-220AB package, providing superior thermal performance up to a junction temperature of 175 degrees Celsius.

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
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