Product Information

HFS10N60U

Name: HFS10N60U
Brand: SemiHow
SKU: HFS10N60U_SemiHow
Availability: OutOfStock
Rating: 5 (11 reviews)

HFS10N60U electronic component of SemiHow

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Datasheet

600V 9.5A 800mO@10V,4.75A 50W N Channel TO-220F-3 MOSFETs ROHS

Manufacturer: SemiHow

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 0.8234 ea
Line Total: USD 0.82

0 - Global Stock

MOQ: 1 Multiples: 1
Pack Size: 1

More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 - WHS 1 Ships to you between Tue. 28 May to Fri. 31 May MOQ : 1 Multiples : 1 HFS10N60U SemiHow	1 : USD 0.8234 10 : USD 0.6847 50 : USD 0.6152 100 : USD 0.5482 500 : USD 0.4381 1000 : USD 0.4166

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Additional Infomation About Product

The HFS10N60U is a 600V 9.5A 800mO@10V,4.75A 50W N Channel MOSFET manufactured by SemiHow. It is a TO-220F-3 package compliant with the Restriction of Hazardous Substances (RoHS) Directive. The MOSFET is an N-channel type, meaning that current can flow through the MOSFET when an applied voltage is above the threshold value. The MOSFET offers a maximum continuous drain-source voltage of 600V, a drain current of 9.5A, an on-resistance of 800mO at 10V, and a power dissipation of 50W.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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Manufacturer SemiHow SemiHow
Product Category MOSFET MOSFET
Brand Semihow Semihow
Rohs Y Y
Package TO - 220F TO - 220F
Fet Type NChannel NChannel
Drain To Source Voltagevdss 600 V 600 V
Continuous Drain Current Id @ 25°C 9.5 A (T C) 9.5 A (T C)
Vgsth Max @ Id 4.5V @ 250uA 4.5V @ 250uA
Rds On Max @ Id Vgs 800mO @ 4.75A,10V 800mO @ 4.75A,10V
Power Dissipation-Max Ta 25°C 50 W (Tc) 50 W (Tc)
Drain Source Voltage Vdss 600 V 600 V
Continuous Drain Current Id 9.5 A 9.5 A
Drain Source On Resistance Rdson@Vgs Id 800 mOhms @10V , 4.75A 800 mOhms @10V , 4.75A
Power Dissipation Pd 50 W 50 W
Gate Threshold Voltage Vgsth@Id 4.5 V @250uA 4.5 V @250uA
Type N Channel N Channel