Product Information

HFS10N80

Name: HFS10N80
Brand: SemiHow
SKU: HFS10N80_SemiHow
Availability: OutOfStock
Rating: 5 (11 reviews)

HFS10N80 electronic component of SemiHow

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Datasheet

MOSFET TO-220F RoHS

Manufacturer: SemiHow

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 1.171 ea
Line Total: USD 1.17

0 - Global Stock

MOQ: 1 Multiples: 1
Pack Size: 1

More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 - WHS 1 Ships to you between Tue. 28 May to Fri. 31 May MOQ : 1 Multiples : 1 HFS10N80 SemiHow	1 : USD 1.171 10 : USD 0.9885 30 : USD 0.896 100 : USD 0.8278 500 : USD 0.762 1000 : USD 0.7304

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Additional Infomation About Product

The HFS10N80 MOSFET TO-220F RoHS is an N-Channel enhancement-mode silicon-gate power field-effect transistor manufactured by SemiHow. It is used for high-efficiency and low-voltage power switching applications such as DC/DC converters, switching mode power supplies, motor controls and load switching circuits. The device has outstanding breakdown voltage capability and extremely low on-resistance. It has an operating junction temperature range of -55°C to 150°C and a thermal resistance of 40°C/W. The package size is TO-220F RoHS Compliant and the pinout configuration is Gate/Drain/Source.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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Manufacturer SemiHow SemiHow
Product Category MOSFET MOSFET
Brand Semihow Semihow
Rohs Y Y
Package TO - 220F TO - 220F
Fet Type NChannel NChannel
Drain To Source Voltagevdss 800 V 800 V
Continuous Drain Current Id @ 25°C 9.4 A (T C) 9.4 A (T C)
Vgsth Max @ Id 4.5V @ 250uA 4.5V @ 250uA
Rds On Max @ Id Vgs 1.15O @ 4.7A,10V 1.15O @ 4.7A,10V
Power Dissipation-Max Ta 25°C 65 W (Tc) 65 W (Tc)
Drain Source Voltage Vdss 800 V 800 V
Continuous Drain Current Id 9.4 A 9.4 A
Drain Source On Resistance Rdson@Vgs Id 1.15 Ohms @10V , 4.7A 1.15 Ohms @10V , 4.7A
Power Dissipation Pd 65 W 65 W
Gate Threshold Voltage Vgsth@Id 4.5 V @250uA 4.5 V @250uA
Type N Channel N Channel