The VS4604AP with MOSFET N Trench 40V 125A 2.4V @ 250uA 5 mO @ 15A,4.5V PDFN5*6 RoHS is a insulated gate bipolar transistor (IGBT) manufactured by Vanguard. It is a power semiconductor switching device with low on-state resistance, low noise, low power consumption, and high switching speed. This power device is designed to switch high current (up to 125A) and high voltage (up to 40V) signals. It features a N trench construction and RoHS compliant material to provide improved thermal performance and better protection against voltage spikes. This device also features a 4.5V pdfn5*6 gate drive, 2.4V @ 250uA gate threshold voltage, and 5mO @ 15A on-state resistance. This IGBT is suitable for high-frequency switching applications, such as solar inverters, motor drivers, and industrial automation.