SEMIX341D16S Semikron

SEMiX341D16s Absolute Maximum Ratings Symbol Conditions Values Unit Recitifier Diode I T =85C 348 A D T = 130 C c j sinus 180 T =100 C 267 A c I T =25C 2500 A FSM j 10 ms T =130 C 2000 A j 2 i t T =25C 31250 As j 10 ms T =130 C 20000 As j V 1700 V SEMiX 13 RSM V 1600 V RRM T -40 ... 130 C j Module T -40 ... 125 C Bridge Rectifier Module stg (uncontrolled) V 1min 4000 V isol AC sinus 50Hz 1s 4800 V SEMiX341D16s Characteristics Features Symbol Conditions min. typ. max. Unit Terminal height 17 mm Diode Chips soldered directly to isolated V T =25C, I = 400 A 1.75 V j F F substrate V T = 130 C 0.9 V j UL recognised file no. E63532 (TO) r T = 130 C 2.7 m j T I T =130 C, V = V 4.5 mA RD j RD RRM Typical Applications* R per diode 0.22 K/W th(j-c) Input Bridge Rectifier for AC/DC motor sin. 180 K/W control Power supply Module R per chip K/W th(c-s) per module 0.04 K/W M to heat sink (M5) 3 5 Nm s M to terminals (M6) 2.5 5 Nm t a 5 * 9,81 m/s w350g D by SEMIKRON Rev. 1 20.03.2013 1SEMiX341D16s Fig. 4R: Power dissipation per module vs. case Fig. 4L: Power dissipation per module vs. direct current temperature Fig. 6: Transient thermal impedance vs. time Fig. 7: On-state characteristics Fig. 8: Surge overload current vs. time 2 Rev. 1 20.03.2013 by SEMIKRON